DataSheet26.com

MRF7S21170HSR3 PDF даташит

Спецификация MRF7S21170HSR3 изготовлена ​​​​«Freescale Semiconductor» и имеет функцию, называемую «RF Power Field Effect Transistors».

Детали детали

Номер произв MRF7S21170HSR3
Описание RF Power Field Effect Transistors
Производители Freescale Semiconductor
логотип Freescale Semiconductor логотип 

12 Pages
scroll

No Preview Available !

MRF7S21170HSR3 Даташит, Описание, Даташиты
www.DataSheet4U.com
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
T16y44p0Di0cPamCl ASH,inwPgoilteuht-5=C0a5%r0riCWerliapWtpts-inCAgDv,gMC.,hAFaPunlnel erFflorBermqaunaednnwcceidy:tVBhDa=Dn3d=.,8324G8MPVHPozltT,se,InsIDpt QuMto=Sdiegln1a,l
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW
Peak Tuned Output Power
Pout @ 1 dB Compression Point w 170 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF7S21170H
Rev. 3, 9/2006
MRF7S21170HR3
MRF7S21170HSR3
2110 - 2170 MHz, 50 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF7S21170HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF7S21170HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
VDD
Tstg
TC
TJ
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 170 W CW
Case Temperature 73°C, 25 W CW
RθJC
0.31
0.36
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
1









No Preview Available !

MRF7S21170HSR3 Даташит, Описание, Даташиты
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
B (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
— 500 nAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 270 μAdc)
VGS(th)
1
2
3 Vdc
Gate Quiescent Voltage (1)
(VDS = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2.7 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 0.9 — pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 703 —
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 2112.5 MHz and
f = 2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps 15 16 18 dB
Drain Efficiency
ηD 29 31 — %
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR 5.7 6.1 — dB
Adjacent Channel Power Ratio
ACPR
- 37 - 35 dBc
Input Return Loss
IRL — - 15 - 9 dB
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 2110 - 2170 MHz Bandwidth
Video Bandwidth
VBW
(Tone Spacing from 100 kHz to VBW)
— 25 —
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 170 W CW
Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 170 W CW
Group Delay @ Pout = 170 W CW, f = 2140 MHz
Part - to - Part Insertion Phase Variation @ Pout = 170 W CW
Gain Variation over Temperature
GF — 0.4 — dB
Φ — 1.95 — °
Delay
ΔΦ
ΔG
— 1.7
— 18
— 0.015
— ns
°
— dB/°C
Output Power Variation over Temperature
ΔP1dB
0.01
— dBm/°C
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
MRF7S21170HR3 MRF7S21170HSR3
2
RF Device Data
Freescale Semiconductor









No Preview Available !

MRF7S21170HSR3 Даташит, Описание, Даташиты
VBIAS
R1
R2
C1
C2
Z7
Z17
VSUPPLY
+
C8 C10 C12 C13
RF
INPUT Z1
C4
Z2 Z3
Z4
Z5 Z6
C3
C5 C6
R3 Z9
RF
Z8
Z10 Z11 Z12 Z13 Z14 Z15
Z16 OUTPUT
C17
DUT
C14 C15 C16 C18
Z18
C7 C9 C11
Z1 0.250x 0.083Microstrip
Z2* 0.090x 0.083Microstrip
Z3* 0.842x 0.083Microstrip
Z4* 0.379x 0.083Microstrip
Z5* 0.307x 0.083Microstrip
Z6 0.156x 0.787Microstrip
Z7 1.160x 0.080Microstrip
Z8 0.119x 0.787Microstrip
Z9 0.077x 0.880Microstrip
Z10 0.459x 1.000Microstrip
Z11
Z12*
Z13*
Z14*
Z15*
Z16
Z17, Z18
PCB
0.060x 0.760Microstrip
0.129x 0.083Microstrip
0.436x 0.083Microstrip
0.490x 0.083Microstrip
0.275x 0.083Microstrip
0.230x 0.083Microstrip
0.900x 0.080Microstrip
Taconix TLX8 - 0300, 0.030, εr =2.55
* Variable for tuning
Figure 1. MRF7S21170HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S21170HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
C1
100 pF 100B Chip Capacitor
100B101JW500XT
C2, C3, C7, C8, C17, C18
6.8 pF 600B Chip Capacitors
600B6R8BT500XT
C4, C15
0.3 pF 700B Chip Capacitors
700B0R3BW500XT
C5
0.8 pF 600B Chip Capacitor
600B0R8BT500XT
C6
0.2 pF 700B Chip Capacitor
700B0R2BW500XT
C9, C10, C11, C12
10 μF Chip Capacitors
C5750X5R1H106MT
C13 470 μF, 63 V Electrolytic Capacitor, Radial 13661471
C14
0.4 pF 700B Chip Capacitor
700B0R4BW500XT
C16
0.1 pF 700B Chip Capacitor
700B0R1BW500XT
R1, R2
10 kΩ, 1/4 W Chip Resistors
CRCW12061001FKTA
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKTA
Manufacturer
ATC
ATC
ATC
ATC
ATC
TDK
Philips
ATC
ATC
Vishay
Vishay
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
3










Скачать PDF:

[ MRF7S21170HSR3.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
MRF7S21170HSR3RF Power Field Effect TransistorsFreescale Semiconductor
Freescale Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск