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NTD32N06 PDF даташит

Спецификация NTD32N06 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «N-Channel DPAK».

Детали детали

Номер произв NTD32N06
Описание N-Channel DPAK
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTD32N06 Даташит, Описание, Даташиты
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NTD32N06
Power MOSFET
32 Amps, 60 Volts, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Pb−Free Packages are Available
Smaller Package than MTB36N06V
Lower RDS(on)
Lower VDS(on)
Lower Total Gate Charge
Lower and Tighter VSD
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage, Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
60
60
"20
"30
Vdc
Vdc
Vdc
32
22
90
93.75
0.625
2.88
1.5
−55 to
+175
Adc
Apk
W
W/°C
W
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C (Note 3)
(VDD = 50 Vdc, VGS = 10 Vdc, L = 1.0 mH,
IL(pk) = 25 A, VDS = 60 Vdc, RG = 25 W)
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RqJC
RqJA
RqJA
TL
313 mJ
1.6 °C/W
52
100
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
3. Repetitive rating; pulse width limited by maximum junction temperature.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 3
1
http://onsemi.com
V(BR)DSS
60 V
RDS(on) TYP
26 mW
ID MAX
32 A
N−Channel
D
G
S
4
12
3
MARKING
DIAGRAMS
4
Drain
DPAK
CASE 369C
STYLE 2
1
Gate
2
Drain
3
Source
4
DPAK−3
CASE 369D
STYLE 2
4
Drain
1
2
3
12 3
Gate Drain Source
32N06
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTD32N06/D









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NTD32N06 Даташит, Описание, Даташиты
NTD32N06
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min
Typ Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Vdc
60 70
− 41.6 − mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
mAdc
− − 1.0
− − 10
IGSS
±100
nAdc
VGS(th)
2.0
2.8 4.0
Vdc
− 7.0 − mV/°C
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 10 Vdc, ID = 16 Adc)
Static Drain−to−Source On−Voltage (Note 4)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 32 Adc)
(VGS = 10 Vdc, ID = 16 Adc, TJ = 150°C)
Forward Transconductance (Note 4) (VDS = 6 Vdc, ID = 16 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 32 Adc,
VGS = 10 Vdc,
RG = 9.1 W) (Note 4)
Gate Charge
(VDS = 48 Vdc, ID = 32 Adc,
VGS = 10 Vdc) (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 4)
(IS = 32 Adc, VGS = 0 Vdc) (Note 4)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 32 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 4)
Reverse Recovery Stored Charge
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
5. Switching characteristics are independent of operating junction temperatures.
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
VSD
trr
ta
tb
QRR
mW
− 21 26
Vdc
− 0.417 0.62
− 0.680 −
− 0.633 −
− 21.1 − mhos
− 1231 1725 pF
− 346 485
− 77 160
− 10 25 ns
− 84 180
− 31 70
− 93 200
− 33 60 nC
− 6.0 −
− 15 −
− 0.89 1.0
− 0.96 −
− 0.75 −
− 52 −
− 37 −
− 14.3 −
− 0.095 −
Vdc
ns
mC
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NTD32N06 Даташит, Описание, Даташиты
NTD32N06
60
VGS = 10 V
50
40
30
20
VGS = 6 V
VGS = 6.5 V
VGS = 7 V VGS = 5.5 V
VGS = 8 V
VGS = 5 V
VGS = 4.5 V
10
VGS = 4 V
0
01 2 34
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
60
VDS > = 10 V
50
40
30
20 TJ = 25°C
10 TJ = 100°C
TJ = −55°C
0
3 3.4 3.8 4.2 4.6 5 5.4 5.8 6.2 6.6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
7
0.038
0.034
VGS = 10 V
0.03
0.026
0.022
0.018
0.014
TJ = 100°C
TJ = 25°C
TJ = −55°C
0.024
0.023
0.022
0.021
0.02
0.019
VGS = 10 V
VGS = 15 V
0.01
0 10 20 30 40 50 60
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.018
0
10 20 30 40
50 60
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
ID = 16 A
1.6 VGS = 10 V
1.4
10000
VGS = 0 V
1000
TJ = 150°C
1.2 TJ = 125°C
1 100
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
TJ = 100°C
10
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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