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TEPT4400 PDF даташит

Спецификация TEPT4400 изготовлена ​​​​«Vishay Siliconix» и имеет функцию, называемую «Ambient Light Sensor».

Детали детали

Номер произв TEPT4400
Описание Ambient Light Sensor
Производители Vishay Siliconix
логотип Vishay Siliconix логотип 

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TEPT4400 Даташит, Описание, Даташиты
www.DataSheet4U.com
Ambient Light Sensor
Description
TEPT4400, photo transistor for ambient light sensor
application, plays a key role in power savings strate-
gies by controlling LCD display intensity and keypad
backlighting of mobile devices and in industrial on/off-
lighting operation. It is sensitive to visible light much
like the human eye and has peak sensitivity at 570 nm.
TEPT4400 is packaged in a T 1" package.
TEPT4400
Vishay Semiconductors
94 8396
Features
• High sensivity, IPCE = 200 µA (EV = 100 lx)
• Adapted to human eye responsivity
• Wide angle of half sensitivity ϕ = ± 30°
• T 1" package (3 mm)
e4
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
Ambient light sensor for control of display backlight
dimming in LCD displays and keypad backlighting of
mobile devices and in industrial on/off-lighting opera-
tion.
Replacement of CdS Photoresistors.
Absolute Maximum Ratings
Tamb = 25 °C unless otherwise specified
Parameter
Test condition
Collector Emitter Voltage
Emitter Collector Voltage
Collector current
Total Power Dissipation
Junction Temperature
Tamb 55 °C
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
t<3s
Thermal Resistance Junction/
Ambient
Symbol
VCEO
VECO
IC
Ptot
Tj
Tamb
Tstg
Tsd
RthJA
Value
6
1.5
20
100
100
- 40 to + 85
- 40 to + 100
260
350
Unit
V
V
mA
mW
°C
°C
°C
°C
K/W
Document Number 81341
Rev. 1.1, 03-Jul-06
www.vishay.com
1









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TEPT4400 Даташит, Описание, Даташиты
TEPT4400
Vishay Semiconductors
Basic Characteristics
Tamb = 25 °C unless otherwise specified
Parameter
Test condition
Collector Emitter Breakdown
Voltage
IC = 0.1 mA
Collector dark current
Collector-emitter capacitance
Collector Light Current
Angle of Half Sensitivity
VCE = 5 V, E = 0
VCE = 0 V, f = 1 MHz, E = 0
Ev = 20 lx, CIE illuminant A,
VCE = 5 V
Ev = 100 lx, CIE illuminant A,
VCE = 5 V
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Ev = 20 lx, standard light A,
IPCE = 1.2 µA
Typical Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
VCEO
ICEO
CCEO
IPCE
IPCE
ϕ
λp
λ0.1
VCEsat
Min Typ. Max
6
3 50
16
15 40 70
200
± 30
570
360 to 970
0.1
Unit
V
nA
pF
µA
µA
deg
nm
nm
V
10 -6
10 -7
VCE = 5 V
10 -8
10 -9
10 -10
10 -11
10 -12
10 -13
- 40
19758
- 20 0 20 40 60 80
Tamb - Ambient Temperature (°C)
100
Figure 1. Collector Dark Current vs. Ambient Temperature
400
350 200 lx
300
250
200 100 lx
150
100 50 lx
50 20 lx
0
0
20210
1234
VCE - Collector Emitter Voltage (V)
5
Figure 3. Photo Current vs. Collector Emitter Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2 VCE = 5 V, T = 2856 K
0.0
- 40 - 20 0
20 40 60 80
19759
Tamb - Ambient Temperature (°C)
100
Figure 2. Relative Photo Current vs. Ambient Temperature
www.vishay.com
2
10000
1000
VCE = 5 V
100
10
10
20149
100
E v - Illuminance (Ix)
1000
Figure 4. Photo Current vs. Illuminance
Document Number 81341
Rev. 1.1, 03-Jul-06









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TEPT4400 Даташит, Описание, Даташиты
TEPT4400
Vishay Semiconductors
25
f = 1 MHz
20
15
10
5
0
0.1 1.0 10.0
19762
VCE - Collector Emitter Voltage (V)
Figure 5. Collector Emitter Capacitance vs.
Collector Emitter Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
300 400 500 600 700 800 900 1000 1100
20019
λ - Wavelength (nm)
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0° 10° 20°
30°
40°
1.0
0.9 50°
0.8 60°
70°
0.7
8
20159 0.6 0.4 0.2 0 0.2 0.4 0.6
Figure 7. Relative Radiant Sensitivity vs. Angular Displacement
Document Number 81341
Rev. 1.1, 03-Jul-06
www.vishay.com
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Номер в каталогеОписаниеПроизводители
TEPT4400Ambient Light SensorVishay Siliconix
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