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AM1214-250 PDF даташит

Спецификация AM1214-250 изготовлена ​​​​«ST Microelectronics» и имеет функцию, называемую «RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS».

Детали детали

Номер произв AM1214-250
Описание RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
Производители ST Microelectronics
логотип ST Microelectronics логотип 

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AM1214-250 Даташит, Описание, Даташиты
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REFRACTORY /GOLD METALLIZATION
EMITTER SITE BALLASTING
LOW RF THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 300 W MIN. WITH 8.0 dB GAIN
1215-1400 MHz OPERATION
AM1214-250
RF POWER TRANSISTORS
L-BAND RADAR APPLICATIONS
TARGET DATA
M259
hermetically sealed
ORDER CODE
AM1214-250
BRANDING
XAM1214-250
DESCRIPTION
The AM1214-250 is a rugged, Class C common
base device designed for new L - Band medium &
long pulse radar applications.
Minimal amplitude droop over a long pulse of 500
microsec. is guaranteed by a thermal design incor-
porating an overlay site-ballasted die geometry.
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
PDISS Power Dissipation (TC 85°C)*
IC Device Current*
VCBO Collector-Base Voltage
Tj Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance*
* Applies only to rated RF amplifier operation: 150 microsec / 10%
July 2000
PIN CONNECTION
1
4
1. Collector
2. Base
2
3
3. Emitter
4. Base
Value
786
21
70
+250
-65 to +200
Unit
W
A
V
°C
°C
0.21
°C/W
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AM1214-250 Даташит, Описание, Даташиты
AM1214-250
ELECTRICAL SPECIFICATION (TCASE = 25°C)
STATIC
Symbol
BVCBO
BVCES
BVEBO
ICES
hFE
IC = 50 mA
IC = 50 mA
IE = 20 mA
VCE = 40 V
VCE = 5 V
Test Conditions
IE = 0 mA
VBE = 0 V
IC = 0 mA
VBE = 0 V
IC = 0.5 A
Min.
70
70
3.5
10
Typ.
Max.
10
Unit
V
V
V
mA
DYNAMIC @ 150 MICROSEC / 10 %
Symbol
Test Conditions
POUT
f = 1215 - 1400 MHz
PIN = 40 W
ηC f = 1215 - 1400 MHz PIN = 40 W
GP f = 1215 - 1400 MHz PIN = 40 W
VCC = 50 V
VCC = 50 V
VCC = 50 V
Min.
300
40
8.75
Typ.
350
45
9.4
Max.
Unit
W
%
dB
DYNAMIC @ 500 MICROSEC / 10 %
Symbol
Test Conditions
POUT
f = 1215 - 1400 MHz
PIN = 40 W
ηC f = 1215 - 1400 MHz PIN = 40 W
GP f = 1215 - 1400 MHz PIN = 40 W
VCC = 42 V
VCC = 42 V
VCC = 42 V
Min.
225
40
7.5
Typ.
250
45
8.0
Max.
Unit
W
%
dB
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AM1214-250 Даташит, Описание, Даташиты
AM1214-250
M259 (.400 x .500 SUPER WIDE 2/L HERM. W/FLG) MECHANICAL DATA
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MIN.
7.49
19.56
9.65
3.18
10.03
12.45
16.38
22.61
0.05
1.40
2.79
mm
TYP.
4.90
3.18
MAX
7.75
21.08
9.91
3.43
10.34
12.95
16.64
23.11
0.15
1.65
3.30
5.84
MIN.
.295
.770
.380
.125
.395
.490
.645
.890
.002
.055
.110
Inch
TYP.
.193
.125
MAX
.305
.830
.390
.135
.407
.510
.655
.910
.006
.065
.130
.230
M259, Package Outline
Ref. 1019147D
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Номер в каталогеОписаниеПроизводители
AM1214-250RF POWER TRANSISTORS L-BAND RADAR APPLICATIONSST Microelectronics
ST Microelectronics

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