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FDP33N25 PDF даташит

Спецификация FDP33N25 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв FDP33N25
Описание N-Channel MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FDP33N25 Даташит, Описание, Даташиты
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FDP33N25
250V N-Channel MOSFET
Features
• 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
• Low gate charge ( typical 36.8 nC)
• Low Crss ( typical 39 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
July 2006
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G
S
FDP33N25
250
33
20.4
132
±30
918
33
23.5
4.5
235
1.89
-55 to +150
300
Min.
--
0.5
--
Max.
0.53
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FDP33N25 Rev A
1
www.fairchildsemi.com









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FDP33N25 Даташит, Описание, Даташиты
Package Marking and Ordering Information
Device Marking
FDP33N25
Device
FDP33N25
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250μA
ID = 250μA, Referenced to 25°C
VDS = 250V, VGS = 0V
VDS = 200V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
250
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250μA
VGS = 10V, ID = 16.5A
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID =16.5A
(Note 4)
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 125V, ID = 33A
RG = 25Ω
VDS = 200V, ID = 33A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 33A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 33A
dIF/dt =100A/μs
(Note 4)
--
--
--
--
--
Typ.
--
0.25
--
--
--
--
--
0.077
26.6
1640
330
39
35
230
75
120
36.8
10
17
--
--
--
220
1.71
Max Units
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
5.0
0.094
--
V
Ω
S
2135
430
59
pF
pF
pF
80 ns
470 ns
160 ns
250 ns
48 nC
-- nC
-- nC
33 A
132 A
1.4 V
-- ns
-- μC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.35mH, IAS = 33A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD 33A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP33N25 Rev A
2 www.fairchildsemi.com









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FDP33N25 Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
102
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
100
10-1
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.25
0.20
0.15
0.10
0.05
0.00
0
VGS = 10V
VGS = 20V
* Note : TJ = 25oC
20 40 60 80
ID, Drain Current [A]
100
Figure 5. Capacitance Characteristics
4000
3000
2000
1000
0
10-1
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Note ;
Crss
1.
V
GS
=
0
V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
2
150oC
25oC
4
-55oC
* Notes :
1. VDS = 40V
2. 250μs Pulse Test
68
VGS, Gate-Source Voltage [V]
10
12
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
150oC
25oC
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10 VDS = 50V
VDS = 125V
8 VDS = 200V
6
4
2
* Note : ID = 33A
0
0 10 20 30 40
QG, Total Gate Charge [nC]
FDP33N25 Rev A
3 www.fairchildsemi.com










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