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FDP8441 PDF даташит

Спецификация FDP8441 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «N-Channel PowerTrench MOSFET».

Детали детали

Номер произв FDP8441
Описание N-Channel PowerTrench MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FDP8441 Даташит, Описание, Даташиты
www.DataSheet4U.com
September 2006
FDP8441
N-Channel PowerTrench® MOSFET
40V, 80A, 2.7m
Features
„ Typ rDS(on) = 2.1mat VGS = 10V, ID = 80A
„ Typ Qg(10) = 215nC at VGS = 10V
„ Low Miller Charge
„ Low Qrr Body Diode
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Electronic Steering
„ Integrated Starter / Alternator
„ Distributed Power Architectures and VRMs
„ Primary Switch for 12V Systems
AD FREE I
tm
©2006 Fairchild Semiconductor Corporation
FDP8441 Rev.A
1
www.fairchildsemi.com









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FDP8441 Даташит, Описание, Даташиты
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 160oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
Single Pulse Avalanche Energy
Power dissipation
Derate above 25oC
Operating and Storage Temperature
(Note 1)
Thermal Characteristics
Ratings
40
±20
80
23
See Figure 4
947
300
2
-55 to 175
Units
V
V
A
mJ
W
W/oC
oC
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Package Marking and Ordering Information
(Note 2)
0.5
62
oC/W
oC/W
Device Marking
FDP8441
Device
FDP8441
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 32V
VGS = 0V
TJ = 150°C
VGS = ±20V
40
-
-
-
- -V
-
-
1
250
µA
- ±100 nA
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VDS = VGS, ID = 250µA
ID = 80A, VGS = 10V
ID = 80A, VGS = 10V,
TJ = 175°C
2 2.8 4
V
- 2.1 2.7
- 3.6 4.7 m
Dynamic Characteristics
Ciss
Coss
Crss
RG
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 20V
ID = 35A
Ig = 1mA
-
-
-
-
-
-
-
-
-
15000
1250
685
1.1
215
29
60
32
49
-
-
-
-
280
38
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
FDP8441 Rev.A
2 www.fairchildsemi.com









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FDP8441 Даташит, Описание, Даташиты
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Switching Characteristics
t(on)
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
VDD = 20V, ID = 35A
VGS = 10V, RGS = 1.5
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD = 35A
ISD = 15A
IF = 35A, di/dt = 100A/µs
IF = 35A, di/dt = 100A/µs
Notes:
1: Starting TJ = 25oC, L = 0.46mH, IAS = 64A.
2: Pulse width = 100s.
Min Typ Max Units
- - 77 ns
- 23 - ns
- 24 - ns
- 75 - ns
- 17.9 -
ns
- - 147 ns
-
0.8 1.25
V
-
0.8 1.0
V
- 52 68 ns
- 76 99 nC
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDP8441 Rev.A
3 www.fairchildsemi.com










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