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FDS4935BZ PDF даташит

Спецификация FDS4935BZ изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «Dual 30 Volt P-Channel PowerTrench MOSFET».

Детали детали

Номер произв FDS4935BZ
Описание Dual 30 Volt P-Channel PowerTrench MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FDS4935BZ Даташит, Описание, Даташиты
www.DataSheet4U.com
September 2006
FDS4935BZ
Dual 30 Volt P-Channel PowerTrench“ MOSFET
tm
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
x –6.9 A, –30 V. RDS(ON) = 22 m: @ VGS = –10 V
RDS(ON) = 35 m: @ VGS = – 4.5 V
x Extended VGSS range (–25V) for battery applications
x ESD protection diode (note 3)
x High performance trench technology for extremely
low RDS(ON)
x High power and current handling capability
DD1
DD1
DD2
DD2
SO-8
Pin 1 SO-8
SS2GS2SS1GG1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDS\
VGS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RTJA Thermal Resistance, Junction-to-Ambient
RTJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4935BZ
FDS4935BZ
13’’
”2006 Fairchild Semiconductor Corporation
5
6 Q1
7
Q2
8
4
3
2
1
Ratings
–30
+25
–6.9
–50
1.6
1.0
0.9
–55 to +150
78
40
Units
V
V
A
W
qC
qC/W
qC/W
Tape width
12mm
Quantity
2500 units
FDS4935BZ Rev B1 (W)









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FDS4935BZ Даташит, Описание, Даташиты
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V, ID = –250 PA
ID = –250 PA,Referenced to 25qC
VDS = –24 V, VGS = 0 V
VGS = +25 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
'VGS(th)
'TJ
rDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
VDS = VGS, ID = –250 PA
ID = –250 PA,Referenced to 25qC
VGS = –10 V, ID = –6.9 A
VGS = –4.5 V, ID = –5.3 A
VGS = –10 V, ID = –6.9A,TJ=125qC
VDS = –5 V, ID = –6.9 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg(TOT)
Total Gate Charge, VGS = 10V
Qg(TOT)
Total Gate Charge, VGS = 5V
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 :
VDS = –15 V, ID = –6.9 A,
VGS = –10 V
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –2.1 A (Note 2)
tRR Reverse Recovery Time
QRR Reverse Recovery Charge
IF = –8.8 A,
diF/dt = 100 A/µs
(Note 2)
–30
–1
24
–1.9
–5
18
27.5
26
22
1360
240
200
12
13
68
38
29
16
4
7
–0.8
24
9
–1
+10
–3
22
35
34
22
23
108
61
40
23
–2.1
–1.2
V
mV/qC
PA
PA
V
mV/qC
m:
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
A
V
ns
nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 78°C/W steady state
when mounted on a
1in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS4935BZ Rev B1 (W)









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FDS4935BZ Даташит, Описание, Даташиты
Typical Characteristics
50
VGS = -10V
40
-6.0V
30
-5.0V
-4.5V
-4.0V
20
10
0
0
-3.5V
-3.0V
123
-VDS, DRAIN TO SOURCE VOLTAGE (V)
4
Figure 1. On-Region Characteristics.
3
VGS = -3.5V
2.6
2.2
-4.0V
1.8
-4.5V
-5.0V
1.4 -6.0V
-8.0V
1
-10V
0.6
0
10 20 30 40
-ID, DRAIN CURRENT (A)
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -8.8A
VGS = -10V
1.4
1.2
1
0.8
0.08
0.06
0.04
TA = 25oC
0.02
TA = 125oC
ID = -4.4A
0.6
-50
-25
0
TJ,
25
JUNCTION
50 75
TEMPERATURE
(1o0C0)
125
150
Figure 3. On-Resistance Variation with
Temperature.
0
2 4 6 8 10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
VDS = -5V
40
30
20
10
0
2
TA = 125oC
-55oC
25oC
2.5 3 3.5 4 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
5
100
VGS = 0V
10
TA = 125oC
1
0.1
25oC
-55oC
0.01
0.001
0
0.4 0.8 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4935BZ Rev B1 (W)










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Номер в каталогеОписаниеПроизводители
FDS4935BZDual 30 Volt P-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor

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