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Datasheet APT40GP60J Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | APT40GP60J | POWER MOS 7 IGBT
APT40GP60J
600V
POWER MOS 7 IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power sup | Advanced Power Technology | igbt |
2 | APT40GP60JDQ2 | POWER MOS 7 IGBT TYPICAL PERFORMANCE CURVES ®
APT40GP60JDQ2 600V
APT40GP60JDQ2
POWER MOS 7 IGBT
®
E G C
E
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimiz | Advanced Power Technology | igbt |
APT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | APT05DC120HJ | SiC Diode Full Bridge Power Module APT05DC120HJ
ISOTOP® SiC Diode Full Bridge Power Module
VRRM = 1200V IC = 5A @ Tc = 100°C
Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers
Features • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Te Microsemi | ||
2 | APT06DC60HJ | SiC Diode Full Bridge Power Module APT06DC60HJ
ISOTOP® SiC Diode Full Bridge Power Module
VRRM = 600V IC = 6A @ Tc = 100°C
Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers
Features • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temp Microsemi | ||
3 | APT1001 | Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs APT1001RBLC APT1001RSLC
1000V 11A 1.000W
BLC D3PAK
TO-247
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge c Advanced Power Technology | ||
4 | APT1001 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS APT1001RBLC APT1001RSLC
1000V 11A 1.000W
BLC D3PAK
TO-247
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge c Advanced Power Technology | ||
5 | APT1001R1AVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs APT1001R1AVR
1000V 9A 1.100Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds throu Advanced Power Technology | ||
6 | APT1001R1BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
TO-247
G S
APT1001R1BN 1000V 10.5A 1.10Ω
®
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1001R3BN 1000V 10.0A 1.30Ω
All Ratings: TC = 25°C unless otherwise specified.
APT 1001RBN APT 1001R3BN UNIT Volts Amps
N - CHANNEL ENHANCEMENT M Advanced Power Technology | ||
7 | APT1001R1BVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT1001R1BVFR
1000V 11A 1.100Ω
POWER MOS V ®
FREDFET
TO-247
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster swi Advanced Power Technology |
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Número de pieza | Descripción | Fabricantes | |
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