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Número de pieza | NE678M04 | |
Descripción | MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR | |
Fabricantes | NEC | |
Logotipo | ||
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MEDIUM POWER NPN SILICON
HIGH FREQUENCY TRANSISTOR
NE678M04
FEATURES
• HIGH GAIN BANDWIDTH:
fT = 12 GHz
• HIGH OUTPUT POWER:
P-1dB = 18 dBm at 1.8 GHz
• HIGH LINEAR GAIN:
GL = 13 dB at 1.8 GHz
• NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
DESCRIPTION
The NE678M04 is fabricated using NEC's HFT3 wafer pro-
cess. With a transition frequency of 12 GHz, the NE678M04 is
usable in applications from 100 MHz to 3 GHz. The NE678M04
provides P1dB of 18 dBm, even with low voltage and low
current, making this device an excellent choice for the driver
stage for mobile or fixed wireless applications.
2.05±0.1
1.25±0.1
+0.30+-00..0051(leads 1, 3 and ,4)
The NE678M04 is housed in NEC's new low profile/flat lead
style "M04" package
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
EIAJ3 REGISTRATION NUMBER
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
NE678M04
M04
2SC5753
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICBO Collector Cutoff Current at VCB = 5V, IE = 0
nA
100
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0
hFE DC Current1 Gain at VCE = 3 V, IC = 30 mA
nA 100
75 120 150
P1dB
Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 10 mA, dBm
f = 1.8 GHz, Pin = 7 dBm
18.0
GL Linear Gain at VCE = 2.8 V, IC = 10 mA, f = 1.8 GHz, Pin = -5 dBm
dB
13.0
MAG
Maximum Available Gain4 at VCE = 3 V, IC = 30 mA, f = 2 GHz
dBm
13.5
|S21E|2
Insertion Power Gain at VCE = 3 V, IC = 30 mA, f = 2 GHz
dB 8.0 10.5
ηc Collector Efficiency at VCE = 2.8 V, ICQ = 10 mA, f = 1.8 GHz,
Pin = 7 dBm
%
55
Notes:
NF
fT
Cre
Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz, ZS = Zopt
Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz
Reverse Transfer Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz
dB
GHz
pF
1.7 2.5
12.0
0.42 0.7
1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan.
4. MAG = |S21| (K ± K 2 - 1 ).
|S12|
California Eastern Laboratories
1 page NE678M04
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
j25 j100
j10 S22
0 10 25 50 100
S11
+135º
+180º
+90º
+45º
5 10 15 20
+0º
-j10
-j25
-j50
NE678M04
VC = 2 V, IC = 10 mA
FREQUENCY
S11
GHz
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.500
1.800
1.900
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
MAG
0.72
0.68
0.65
0.63
0.62
0.60
0.60
0.60
0.60
0.60
0.59
0.59
0.59
0.59
0.59
0.60
0.61
0.63
0.65
0.67
0.69
0.71
ANG
-45.97
-81.43
-106.66
-124.06
-136.69
-148.20
-155.78
-161.77
-167.38
-171.69
170.30
161.69
158.90
156.19
142.62
128.82
114.69
101.16
89.04
78.45
68.99
59.90
-j100
S21
MAG
ANG
23.42
19.17
15.41
12.56
10.53
8.85
7.72
6.86
6.15
5.59
3.81
3.21
3.05
2.90
2.35
1.97
1.69
1.47
1.29
1.15
1.02
0.92
152.40
132.28
118.19
108.21
100.63
94.98
89.80
85.45
81.38
77.66
61.44
52.84
50.05
47.32
33.99
21.32
9.12
-2.44
-13.44
-23.86
-33.79
-43.00
S12
MAG
0.02
0.04
0.05
0.05
0.06
0.06
0.06
0.06
0.07
0.07
0.08
0.09
0.09
0.09
0.11
0.13
0.14
0.16
0.18
0.19
0.21
0.23
ANG
65.62
52.02
42.17
37.11
33.66
32.53
31.81
31.70
31.29
31.31
33.17
33.52
33.69
33.45
32.55
29.86
26.40
21.89
16.66
10.92
4.77
-1.43
-135º
-45º
-90º
S22
MAG
ANG
0.90 -29.51
0.74 -51.31
0.61 -66.86
0.52 -77.84
0.46 -86.27
0.38 -92.24
0.36 -98.70
0.34 -102.52
0.33 -106.64
0.32 -110.16
0.31 -123.84
0.32 -130.08
0.32 -131.91
0.33 -133.96
0.36 -142.01
0.39 -149.47
0.43 -156.17
0.47 -163.41
0.50 -171.39
0.53 179.62
0.57 170.14
0.60 160.66
K MAG1
(dB)
0.10 29.97
0.18 26.71
0.26 24.93
0.34 23.61
0.42 22.62
0.56 21.75
0.62 21.00
0.68 20.32
0.74 19.72
0.79 19.17
1.00 16.81
1.07 13.98
1.10 13.41
1.11 12.93
1.14 11.02
1.15 9.63
1.12 8.62
1.07 7.95
1.03 7.59
0.98 7.69
0.94 6.86
0.92 6.09
Note:
1. Gain Calculations:
( ).MAG = |S21| K – K 2 - 1 When K ≥ 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | ∆ | 2 - |S11| 2 - |S22| 2 , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet NE678M04.PDF ] |
Número de pieza | Descripción | Fabricantes |
NE678M04 | MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR | NEC |
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