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PDF ADG787 Data sheet ( Hoja de datos )

Número de pieza ADG787
Descripción 2.5 OHM CMOS Low Power Dual 2:1 Mux/Demux USB 1.1 Switch
Fabricantes Analog Devices 
Logotipo Analog Devices Logotipo



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2.5 Ω CMOS Low Power
Dual 2:1 Mux/Demux USB 1.1 Switch
ADG787
FEATURES
USB 1.1 signal switching compliant
−3 dB bandwidth, 150 MHz
Tiny 10-lead LFCSP and MSOP packages, 10-ball WLCSP
package
Single-supply 1.8 V to 5.5 V operation
Low on resistance
2.5 Ω typical
3.45 Ω maximum at 85°C
Typical power consumption: <0.1 μW
APPLICATIONS
USB 1.1 signal switching circuits
Cellular phones
PDAs
MP3 players
Battery-powered systems
Headphone switching
Audio and video signal routing
Communications systems
GENERAL DESCRIPTION
The ADG787 is a low voltage, CMOS device that contains two
independently selectable single-pole, double-throw (SPDT)
switches. It is designed as a general analog-to-digital switch and
can also be used for routing USB 1.1 signals.
This device offers low on resistance of typically 2.5 Ω, making
the part an attractive solution for applications that require low
distortion through the switch.
The ADG787 comes in a 10-ball WLCSP, a tiny 10-lead LFCSP,
and a tiny 10-lead MSOP. These packages make the ADG787
the ideal solution for space-constrained applications.
Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. The
ADG787 exhibits break-before-make switching action.
FUNCTIONAL BLOCK DIAGRAM
ADG787
S1A
D1
S1B
IN1
IN2
S2A
D2
S2B
SWITCHES SHOWN
FOR A LOGIC 0 INPUT
Figure 1.
MASK: FS (12Mbps)
1
20.0ns/DIV
VIN = 3V p-p
TA = 25°C
Figure 2. Eye Pattern; 12 Mbps, VDD = 4.2 V, PRBS 31
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2006 Analog Devices, Inc. All rights reserved.

1 page




ADG787 pdf
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
VDD to GND
Analog Inputs1, Digital Inputs
Peak Current, S or D
5 V Operation
3.3 V Operation
Continuous Current, S or D
5 V Operation
3.3 V Operation
Operating Temperature Range
Extended Industrial (B Version)
MSOP and LFCSP packages
Industrial (B version)
WLCSP package
Storage Temperature Range
Junction Temperature
WLCSP Package (4-Layer Board)
θJA Thermal Impedance
LFCSP Package (4-Layer Board)
θJA Thermal Impedance
MSOP Package (4-Layer Board)
θJA Thermal Impedance
θJC Thermal Impedance
Lead-Free Temperature Soldering
IR Reflow, Peak Temperature
Peak Temperature
Time at Peak Temperature
Rating
−0.3 V to +6 V
−0.3 V to VDD + 0.3 V or
30 mA (whichever
occurs first)
300 mA
200 mA (pulsed at 1 ms,
10% duty cycle max)
100 mA
80 mA
−40°C to +85°C
−25°C to +85°C
−65°C to +150°C
150°C
120°C/W
61°C/W
142°C/W
43.7°C/W
260(+0/−5)°C
10 sec to 40 sec
1 Overvoltages at the IN, S, or D pins are clamped by internal diodes. Current
should be limited to the maximum ratings given.
ADG787
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at any one
time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. A | Page 5 of 16

5 Page





ADG787 arduino
TEST CIRCUITS
IDS
V1
SD
VS RON = V1/IDS
Figure 28. On Resistance
ADG787
IS (OFF)
AS
VS
ID (OFF)
DA
VD
Figure 29. Off Leakage
ID (ON)
NC S D A
VD
Figure 30. On Leakage
VDD
0.1μF
VDD
VS S1B
S1A
D
IN
GND
RL
50Ω
VOUT
CL
35pF
VIN
VOUT
50%
90%
tON
Figure 31. Switching Times, tON, tOFF
50%
90%
tOFF
VDD
0.1μF
VDD
VS S1B
S1A
D
IN
GND
RL
50Ω
VOUT
CL
35pF
VIN
0V
50%
VOUT
80%
tBBM
Figure 32. Break-Before-Make Time Delay, tBBM
50%
80%
tBBM
VDD
VS D
IN
S1B
S1A
GND
NC
VOUT
1nF
SW ON
VIN
SW OFF
VOUT
ΔVOUT
QINJ = CL ⋅ ΔVOUT
Figure 33. Charge Injection
Rev. A | Page 11 of 16

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