Datasheet BF1206F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BF1206F	Dual N-channel dual-gate MOS-FET BF1206F Dual N-channel dual gate MOSFET Rev. 01 — 30 January 2006 Product data sheet 1. Product proﬁle 1.1 General description The BF1206F is a combination of two different dual gate MOSFET ampliﬁers with shared source and gate2 leads. The source and substrate are interco	NXP Semiconductors	gate

BF1 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BF1005	N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1005 Marking Ordering Code Pin Configuration	Siemens Semiconductor Group	mosfet
2	BF1005	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF1005... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostat	Infineon Technologies AG	mosfet
3	BF1005R	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF1005... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostat	Infineon Technologies AG	mosfet
4	BF1005S	N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1665 Pin Config	Siemens Semiconductor Group	mosfet
5	BF1005S	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF1005S... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrost	Infineon Technologies AG	mosfet
6	BF1005SR	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF1005S... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrost	Infineon Technologies AG	mosfet
7	BF1005SW	Silicon N-Channel MOSFET Tetrode BF1005S... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! T	Infineon Technologies AG	mosfet

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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