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PDF NUP4201DR2 Data sheet ( Hoja de datos )
| Número de pieza | NUP4201DR2 | |
| Descripción | Low Capacitance Surface Mount TVS | |
| Fabricantes | ON Semiconductor | |
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NUP4201DR2
Low Capacitance Surface
Mount TVS for High−Speed
Data Interfaces
The NUP4201DR2 transient voltage suppressor is designed to
protect equipment attached to high speed communication lines from
ESD, EFT, and lightning.
Features:
• SO−8 Package
• Peak Power − 500 Watts 8 x 20 mS
• ESD Rating:
IEC 61000−4−2 (ESD) 15 kV (air) 8 kV (contact)
IEC 61000−4−4 (EFT) 40 A (5/50 ns)
IEC 61000−4−5 (lightning) 23 (8/20 ms)
• UL Flammability Rating of 94V−0
Typical Applications:
• High Speed Communication Line Protection
• USB Power and Data Line Protection
• Video Line Protection
• Base Stations
• HDSL, IDSL Secondary IC Side Protection
• Microcontroller Input Protection
MAXIMUM RATINGS
Rating
Symbol Value Unit
Peak Power Dissipation
8 x 20 mS @ TA = 25°C (Note 1)
Junction and Storage
Temperature Range
Ppk 500
TJ, Tstg
−55 to
+150
W
°C
Lead Solder Temperature −
Maximum 10 Seconds Duration
TL 260 °C
1. Non−repetitive current pulse 8 x 20 mS exponential decay waveform
http://onsemi.com
SO−8 LOW CAPACITANCE
VOLTAGE SUPPRESSOR
500 WATTS PEAK POWER
6 VOLTS
PIN CONFIGURATION
AND SCHEMATIC
I/O 1 1
REF 1 2
REF 1 3
I/O 2 4
8 REF 2
7 I/O 4
6 I/O 3
5 REF 2
8
1
SO−8
CASE 751
PLASTIC
MARKING DIAGRAM
P4201
LYW
P4201 = Device Code
L = Location Code
Y = Year
W = Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NUP4201DR2 SO−8
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 3
1
Publication Order Number:
NUP4201DR2/D
1 page  
NUP4201DR2
“Rail to Rail” Protection Topology
The following figure shows a case when discrete diodes
are configured for rail to rail protection on an I/O line:
VCC
ESD
Positive
11 D1 VF + VCC
ESD
Negative
12 D2
−VF
Upon the above figure, it is possible to observe that if a
positive ESD condition occurs, the D1 diode will be forward
biased while the D2 diode will be biased when a negative
ESD condition occurs. A valid first approximation of the
resulting clamping voltage due to the protection diodes can
be made as follows:
For positive pulse conditions:
Vc = Vcc + Vf
For negative pulse conditions:
Vc = −Vf
It is important to mention that effects of parasitic
inductances must be considered for fast rise time transient
conditions because the clamping voltage on the protected
circuit will be different than in the previous case. A valid
approximation of the resulting clamping voltage can be
made as show below:
For positive pulse conditions:
Vc = Vcc + Vf + (L diESD/dt)
For negative pulse conditions:
Vc = −Vf – (L diESD/dt)
As shown in the formulas, the clamping voltage (Vc) not
only depends on the Vf of the steering diodes but also in the
L diESD/dt factor, so this is why it is very important to have
a good board layout to minimize the effects of the parasitic
inductances.
Nevertheless, some disadvantages are still present when
discrete diodes are used to suppress ESD conditions in “rail
to rail” configuration. If the ESD current is too high, it can
potentially result in the damage of any components
connected to that rail and it is also possible to experience
damage in the discrete diodes if their power dissipation
capability is exceeded.
The NUP4201DR2 On Semiconductor’s device provides
a concept named “RailClamp” which is designed to
eliminate the disadvantages of the usage of discrete diodes
for ESD protection. The RailClamp concept is achieved
with the integration of the TVS device in together with the
steering diodes.
D1 D3 D5 D7
D2 D4 D6 D8
0
Rail to Rail Protection with integrated TBS to achieve the
RailClamp concept
During an ESD condition, the ESD current will be driven
to ground through the TVS device, so the resulting clamping
voltage on the protected IC will be:
Vc = VF(RailClamp) + VTVS.
The clamping voltage of the TVS device is shown as part
of the specifications of the NUP4201DR2 datasheet. The
clamping voltage will depend on the magnitude of the ESD
current. The steering diodes are fast switching devices with
unique forward voltage and low capacitance characteristics.
http://onsemi.com
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| PDF Descargar | [ Datasheet NUP4201DR2.PDF ] | |
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