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Datasheet 2SA1774 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SA1774 | PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2SA1774/D
PNP Silicon General Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount |  Motorola Inc | transistor |
| 2 | 2SA1774 | PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT 2SA1774 PNP Silicon General Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium.
Features |  ON Semiconductor | transistor |
| 3 | 2SA1774 | General Purpose Transistor Transistors
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS
General Purpose Transistor (−50V, −0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS
!Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. !External dimensions (Units |  ROHM Semiconductor | transistor |
| 4 | 2SA1774 | GENERAL PURPOSE TRANSISTOR UTC 2SA1774
PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
FEATURES
* Excellent hFE linearity * Complements the UTC 2SC4617
MARKING
A5
1
2
3
SOT-523
1: EMITTER
2: BASE
3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage |  Unisonic Technologies | transistor |
| 5 | 2SA1774 | PNP General Purpose Transistors 2SA1774
PNP
1 2 3 3
SC-89 (SOT-523F)
WEITRON
http://www.weitron.com.tw
2SA1774
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC=-1 mAdc, VCE=-6.0 Vdc) Collector-Emitter Sat |  Weitron Technology | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating  Panasonic Semiconductor transistor | | |
| 2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
| 3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
| 4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
| 5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
| 6 | 2SA100 | Ge PNP Drift ETC transistor | | |
| 7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY  Inchange Semiconductor transistor | |
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