(PDF) AP3000C-11 Datasheet - SILICON PIN DIODE

Número de pieza	AP3000C-11
Descripción	SILICON PIN DIODE
Fabricantes	ASI
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No Preview Available ! AP3000C-11 SILICON PIN DIODE DESCRIPTION: The AP3000C-11 is a Passivated Epitaxial Silicon PIN Diode Housed in a Hermetically Sealed Glass Package. This Device is Designed to Cover a Wide Range of control Applications Such as RF Switching, Phase Shifting, Modulation, Duplexing Limiting and Pulse Forming. PACKAGE STYLE 01 MAXIMUM RATINGS IC 100 mA VCE PDISS TJ TSTG θJC 300 V 250 mW @ TA = 25 OC -65 OC to +175 OC -65 OC to +175 OC 20 OC/W www.DataSheet4U.com NONE CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS VB IR = 10 µA CJ VR = 50 V VR = 40 V f = 1.0 MHz CP f = 1.0 MHz LS RS IF = 50 mA f = 100 MHz TL IF = 10 mA IR = 6.0 mA Trr IF = 20 mA IR = 100 mA @ 90% I-REGION MINIMUM 300 TYPICAL 0.10 1.0 1000 100 30 MAXIMUM 0.2 0.6 UNITS V pF pF nH Ohms nS nS µM A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF AP3000C-11 Data sheet ( Hoja de datos )