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Número de pieza | DMN5L06WK | |
Descripción | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
Fabricantes | Diodes Incorporated | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMN5L06WK (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! SPICE MODEL: DMN5L06WK
Lead-free Green
DMN5L06WK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance: RDS(ON)
· Very Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
· Lead Free By Design/RoHS Compliant (Note 2)
· ESD Protected Up To 2kV
· "Green" Device (Note 4)
· Qualified to AEC-Q101 standards for High Reliability
A
D
BC
GS
G
H
K
M
Mechanical Data
J
DE
L
· Case: SOT-323
Drain
· Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Finish ¾ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
· Terminal Connections: See Diagram
· Marking: See Last Page
· Ordering & Date Code Information: See Last Page
· Weight: 0.006 grams (approximate)
Gate
Gate
Protection
Diode
ESD protected up to 2kV
Source
EQUIVALENT CIRCUIT
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
a 0° 8°
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Pulsed (Note 3)
Symbol
VDSS
VGSS
ID
Pd
RqJA
Tj, TSTG
Value
50
±20
300
800
200
625
-65 to +150
Note:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width £10mS, Duty Cycle £1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
V
V
mA
mW
°C/W
°C
DS30928 Rev. 2 - 2
1 of 5
www.diodes.com
DMN5L06WK
ã Diodes Incorporated
1 page Marking Information
DAB
DAB = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
Jan
1
2006
T
Feb Mar Apr
234
2007
U
2008
V
May Jun Jul Aug Sep
5 678 9
2009
W
Oct Nov Dec
O ND
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
DS30928 Rev. 2 - 2
5 of 5
www.diodes.com
DMN5L06WK
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet DMN5L06WK.PDF ] |
Número de pieza | Descripción | Fabricantes |
DMN5L06W | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
DMN5L06WK | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
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