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Número de pieza | IRF3805PbF | |
Descripción | AUTOMOTIVE MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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PD - 97046
AUTOMOTIVE MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
G
TO-220AB
IRF3805PbF
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
VGS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
www.irf.com
Parameter
kJunction-to-Case
iCase-to-Sink, Flat Greased Surface
ikJunction-to-Ambient
jkJunction-to-Ambient (PCB Mount)
IRF3805PbF
IRF3805SPbF
IRF3805LPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 3.3mΩ
S ID = 75A
D2Pak
TO-262
IRF3805SPbF IRF3805LPbF
Max.
210
150
75
890
300
2.0
± 20
650
940
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
0.50
–––
–––
Max.
0.5 l
–––
62
40
Units
°C/W
1
9/20/05
1 page 240
LIMITED BY PACKAGE
200
160
120
80
40
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF3805/S/LPbF
2.0
ID = 75A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
τCτ
Ri (°C/W) τi (sec)
0.2653 0.001016
0.2347 0.012816
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page IRF3805/S/LPbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches))
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
ASS EMBLED ON WW 19, 1997
IN T HE ASS EMBLY LINE "C"
Note: "P" in assembly line
pos ition indicates "Lead-Free"
INT ERNAT IONAL
RECT IFIER
LOGO
ASS EMBLY
LOT CODE
OR
INT ERNAT IONAL
RECT IFIER
LOGO
AS SEMBLY
LOT CODE
www.irf.com
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
PART NUMBER
DAT E CODE
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
WEEK 19
A = ASS EMBLY SITE CODE
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IRF3805PbF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF3805PbF | AUTOMOTIVE MOSFET | International Rectifier |
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