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PDF BSS64 Data sheet ( Hoja de datos )
| Número de pieza | BSS64 | |
| Descripción | SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSS64 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 SEPTEMBER 95 7
COMPLIMENTARY TYPE - BSS63
PARTMARKING DETAIL -
BSS64 - U3
BSS64R - U6
BSS64
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PTOT
tj:tstg
VALUE
120
80
5
100
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 120
V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80
V IC=4mA
Emitter-Base Breakdown V(BR)EBO 5
Voltage
V IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
IEBO
VCE(sat)
VBE(sat)
100
50
nA
µA
VVCCBB==9900VV,Tj=150oC
200 nA
VEB=5V
150 mV IC=4mA, IB=400µA
200 mV IC=50mA, IB=15mA
1.2 mV IC=4mA, IB=400µA
Static Forward Current
hFE
Transition Frequency
fT
Typ.
60
20 80
55
IC=1mA, VCE=-1V
IC=10mA, VCE=1V
IC=20mA, VCE=1V
Typ.
60 100 MHz VCE=10V, IC=4mA
f=35 MHz
Output Capacitance
Cobo
Typ.
3
5
pF VCB=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
PAGE NUMBER
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BSS64.PDF ] | |
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