|
|
PDF APTM10TAM09FP Data sheet ( Hoja de datos )
| Número de pieza | APTM10TAM09FP | |
| Descripción | MOSFET Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de APTM10TAM09FP (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
APTM10TAM09FP
Triple phase leg
MOSFET Power Module
VDSS = 100V
RDSon = 09mΩ max @ Tj = 25°C
ID = 139A @ Tc = 25°C
VBUS1
VBUS2
VBUS3
Application
• Welding converters
• Switched Mode Power Supplies
G1 G3 G5
• Uninterruptible Power Supplies
S1 S3 S5
• Motor control
UVW
G2
S2
0/ VBUS1
G4
S4
0/ VBUS2
G6
S6
0/VBUS3
Features
• Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
www.DataSheet4U.com
• High level of integration
Benefits
VBUS 1
VBUS 2
VBUS 3
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
G1 G3 G5
0/VBUS 1 S1 0/VBUS 2 S3 0/VBUS 3 S5
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
S2
G2
U
S4
G4
V
S6
G6
W
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
Absolute maximum ratings
Symbol
Parameter
• Module can be configured as a boost followed by a
full bridge
Max ratings
Unit
VDSS
ID
IDM
VGS
RDSon
PD
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Tc = 25°C
Tc = 80°C
Tc = 25°C
100
139
100
430
±30
9
390
V
A
V
mΩ
W
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
100
50
3000
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
1 page  
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
1000
Ciss
Coss
Crss
100
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM10TAM09FP
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID= 139A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100
limited by
RDS on
100µs
1ms
10 10ms
Single pulse
TJ=150°C
1
1 10 100
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
ID=139A
14 TJ=25°C
VDS=20V
12
10 VDS=50V
8 VDS=80V
6
4
2
0
0 100 200 300 400 500
Gate Charge (nC)
APT website – http://www.advancedpower.com
5–6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTM10TAM09FP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| APTM10TAM09FP | MOSFET Power Module | Advanced Power Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |