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PDF APTM50DAM38CT Data sheet ( Hoja de datos )
| Número de pieza | APTM50DAM38CT | |
| Descripción | MOSFET Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APTM50DAM38CT (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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APTM50DAM38CT
Boost chopper
SiC FWD diode
MOSFET Power Module
VBUS SENSE
VBUS
NT C2
CR1
OUT
Q2
VDSS = 500V
RDSon = 38mW max @ Tj = 25°C
ID = 90A @ Tc = 25°C
Application
· AC and DC motor control
· Switched Mode Power Supplies
· Power Factor Correction
Features
· Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
G2
S2
0/VBU S
NT C1
· FWD SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
www.DataSheet4U.com
· Kelvin source for easy drive
· Very low stray inductance²
- Symmetrical design
- Lead frames for power connections
G2
OUT
S2
· Internal thermistor for temperature monitoring
· High level of integration
VBUS
VBUS
SENSE
0/VBUS
S2
G2
OUT
NTC2
NTC1
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
Absolute maximum ratings
· Low profile
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
500
90
67
360
±30
38
694
46
50
2500
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–7
1 page  
Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
1000
100
Ciss
Coss
Crss
10
0 10 20 30 40
VDS, Drain to Source Voltage (V)
50
APTM50DAM38CT
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID=45A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100
limited by RDSon
limited by RDSon
100µs
10 1ms
Single pulse
TJ=150°C
1
10ms
100ms
1 10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
ID=90A
TJ=25°C
VCE=100V
VCE=250V
10
8 VCE=400V
6
4
2
0
0 40 80 120 160 200 240 280 320
Gate Charge (nC)
APT website – http://www.advancedpower.com
5–7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet APTM50DAM38CT.PDF ] | |
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