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Datasheet DXT2907A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | DXT2907A | PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT
Features
• Epitaxial Planar Die Construction • Complementary NPN Type Available (DXT2222A) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free by Design/RoHS Compliant (Note 1) • "Green" Device (Note |  Diodes | transistor |
| 2 | DXT2907A | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DC COMPONENTS CO., LTD.
R
DXT2907A
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier and high -speed, medium-power switching applications.
SOT-89
.066(1.70) .059(1.50) .063(1.60) .055(1.40) |  Dc Components | transistor |
DXT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | DXT13003DG | NPN HIGH VOLTAGE POWER TRANSISTOR DXT13003DG
450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223
Features
• BVCEO > 450V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector Current • Integrated Collector-Emitter Diode to act as free-wheeling diode • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • H Diodes transistor | | |
| 2 | DXT13003DK | NPN HIGH VOLTAGE POWER TRANSISTOR DXT13003DK
450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252
Features
• BVCEO > 450V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector Current • Integrated Anti-Parallel Diode to act as free-wheeling diode • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Haloge Diodes transistor | | |
| 3 | DXT13003EK | NPN HIGH VOLTAGE POWER TRANSISTOR DXT13003EK
460V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252
Features
• BVCEO > 460V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector Current • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data Diodes transistor | | |
| 4 | DXT2010P5 | NPN MEDIUM POWER TRANSISTOR ADVANCE INFORMATION
Features
• 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 3.2W • VCEO = 60V • IC = 6A; ICM = 20A • Low Saturation voltage • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • “Green” Device (Note 2)
Applicati Diodes transistor | | |
| 5 | DXT2011P5 | NPN MEDIUM POWER TRANSISTOR ADVANCE INFORMATION
A Product Line of Diodes Incorporated
DXT2011P5
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR POWERDI®5
Features
• BVCEO > 100V • IC = 6A High Continuous Collector Current • ICM = 10A Peak Collector Current • PD up to 3.2W • 43% smaller than SOT223; 60% smaller tha Diodes transistor | | |
| 6 | DXT2012P5 | PNP MEDIUM POWER TRANSISTOR ADVANCE INFORMATION
Features
• 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 3.2W • VCEO = 60V • IC = -5.5A; ICM = 15A • Low Saturation voltage • Lead, Halogen, and Antimony Free/RoHS Compliant (Note 1) • “Green” Device (Note 2)
Applic Diodes transistor | | |
| 7 | DXT2013P5 | PNP MEDIUM POWER TRANSISTOR ADVANCE INFORMATION
Features
• 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 3.2W • VCEO = -100V • IC = -5A; ICM = -10A • Low Saturation voltage • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • “Green” Device (Note 2)
Appli Diodes transistor | |
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