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Datasheet SPP1413 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SPP1413 | P-Channel Enhancement Mode MOSFET
SPP1413
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP1413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistanc |  SYNC POWER | mosfet |
| 2 | SPP1413A | P-Channel Enhancement Mode MOSFET SPP1413A
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP1413A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar | SYNC POWER | mosfet |
| 3 | SPP1413A | P-Channel Enhancement Mode MOSFET
SPP1413A
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP1413A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resista | SYNC POWER | mosfet |
SPP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | SPP-ID975 | Service Manual w
w
h Ver 1.0 1999. 11 S a t a D . w
SERVICE ee MANUAL
U 4 t
SPP-ID975/ID976
m o .c
US Model
SPP-ID975
Canadian Model
SPP-ID976
Photo: SPP-ID975
SPECIFICATIONS
General
Frequency band (SPP-ID975) 902 – 928 MHz Frequency band (SPP-ID976) 923.1 – 927.75 MHz Base phone : 18 µW Handset : 73  Sony  | ||
| 2 | SPP-ID975 | Cordless Telephone Sony | ||
| 3 | SPP-ID976 | Service Manual w
w
h Ver 1.0 1999. 11 S a t a D . w
SERVICE ee MANUAL
U 4 t
SPP-ID975/ID976
m o .c
US Model
SPP-ID975
Canadian Model
SPP-ID976
Photo: SPP-ID975
SPECIFICATIONS
General
Frequency band (SPP-ID975) 902 – 928 MHz Frequency band (SPP-ID976) 923.1 – 927.75 MHz Base phone : 18 µW Handset : 73 Sony | ||
| 4 | SPP02N60C3 | Cool MOS Power Transistor
Final data
SPP02N60C3 SPB02N60C3
VDS @ Tjmax RDS(on) ID
P-TO263-3-2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances
650 3 1.8  Infineon Technologies | ||
| 5 | SPP02N60S5 | Cool MOS Power Transistor
SPP02N60S5 SPB02N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
P-TO220-3-1
VDS RDS(on) ID
Infineon Technologies | ||
| 6 | SPP02N80C3 | Cool MOS Power Transistor
Final data
SPP02N80C3 SPA02N80C3
VDS RDS(on) ID
P-TO220-3-31
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 Infineon Technologies | ||
| 7 | SPP03N60C3 | Cool MOS Power Transistor Final data
SPP03N60C3, SPB03N60C3 SPA03N60C3
VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved tr Infineon Technologies |
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