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Número de pieza | GSS6900S | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | GTM | |
Logotipo | ||
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Pb Free Plating Product
ISSUED DATE :2006/04/28
REVISED DATE :
GSS6900S
CH1 BVDSS
30V
N-CH RDS(ON) 30m
DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE
N-CH ID
CH2 BVDSS
5.7A
30V
N-CH RDS(ON) 22m
Description
N-CH ID
9.8A
The GSS6900S provide the designer with the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*DC-DC Converter Suitable
*Fast Switching Performance
Package Dimensions
REF.
A
B
C
D
E
F
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Thermal Resistance Junction-ambient3
Thermal Resistance Junction-ambient3
Symbol
Rthj-a(CH-1)
Rthj-a(CH-2)
Rthj-a(Schottky)
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Ratings
CH-1
CH-2
30 30
±20 ±20
5.7 9.8
4.6 7.8
20 30
1.4 3.1
0.01 0.02
-55 ~ +150
Value
Typ.
Max.
70 90
42 40
52 60
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Unit
V
V
A
A
A
W
W/
Unit
/W
/W
/W
GSS4816S
Page: 1/8
1 page CH-1
ISSUED DATE :2006/04/28
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
GSS4816S
Fig 12. Gate Charge Waveform
Page: 5/8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet GSS6900S.PDF ] |
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