|
|
Datasheet SIGC06T60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SIGC06T60 | IGBT3 Chip
SIGC06T60
IGBT Chip
FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module • discrete components Applications: • dr |  Infineon Technologies | igbt |
| 2 | SIGC06T60G | IGBT3 Chip
SIGC06T60G
IGBT Chip
FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module • discrete components Applications: • d | Infineon Technologies | igbt |
SIG Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SIG01 | GENERAL-USE RECTIFIER DIODE ETC rectifier | | |
| 2 | SIGC04T60 | IGBT3 Chip
SIGC04T60
IGBT Chip
FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module • discrete components Applications: • dr Infineon Technologies igbt | | |
| 3 | SIGC04T60G | IGBT3 Chip
SIGC04T60G
IGBT Chip
FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module • discrete components Applications: • d Infineon Technologies igbt | | |
| 4 | SIGC06T120CS | IGBT Chip
SIGC06T120CS
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling
C
This chip is used for: • SGP02N120 Applications: • drives, SMPS, resonant applications
G
E
Chip Infineon Technologies igbt | | |
| 5 | SIGC06T60 | IGBT3 Chip
SIGC06T60
IGBT Chip
FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module • discrete components Applications: • dr Infineon Technologies igbt | | |
| 6 | SIGC06T60G | IGBT3 Chip
SIGC06T60G
IGBT Chip
FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module • discrete components Applications: • d Infineon Technologies igbt | | |
| 7 | SIGC07T60NC | IGBT Chip
SIGC07T60NC
IGBT Chip in NPT-technology
FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling
C
This chip is used for: • IGBT-Modules Applications: • drives
G E
Chip Type SIGC07T60NC
VCE 600V
ICn 6A
Die Size 2.6 x 2. Infineon Technologies igbt | |
| Esta página es del resultado de búsqueda del SIGC06T60. Si pulsa el resultado de búsqueda de SIGC06T60 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |