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Datasheet SIGC109T120R3L Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SIGC109T120R3L | IGBT3 Chip
SIGC109T120R3L
IGBT Chip
FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module
C
Applications: • drives
G
E
Chi | Infineon Technologies | igbt |
2 | SIGC109T120R3LE | IGBT, Insulated Gate Bipolar Transistor IGBT
TRENCHSTOPTM IGBT3 Chip
SIGC109T120R3LE
Data Sheet Industrial Power Control
SIGC109T120R3LE
Table of Contents
Features and Applications...............................................................................................................................3 Mechanical Parameters......... | Infineon | igbt |
SIG Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SIG01 | GENERAL-USE RECTIFIER DIODE ETC rectifier | | |
2 | SIGC04T60 | IGBT3 Chip
SIGC04T60
IGBT Chip
FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module • discrete components Applications: • dr Infineon Technologies igbt | | |
3 | SIGC04T60G | IGBT3 Chip
SIGC04T60G
IGBT Chip
FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module • discrete components Applications: • d Infineon Technologies igbt | | |
4 | SIGC06T120CS | IGBT Chip
SIGC06T120CS
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling
C
This chip is used for: • SGP02N120 Applications: • drives, SMPS, resonant applications
G
E
Chip Infineon Technologies igbt | | |
5 | SIGC06T60 | IGBT3 Chip
SIGC06T60
IGBT Chip
FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module • discrete components Applications: • dr Infineon Technologies igbt | | |
6 | SIGC06T60G | IGBT3 Chip
SIGC06T60G
IGBT Chip
FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module • discrete components Applications: • d Infineon Technologies igbt | | |
7 | SIGC07T60NC | IGBT Chip
SIGC07T60NC
IGBT Chip in NPT-technology
FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling
C
This chip is used for: • IGBT-Modules Applications: • drives
G E
Chip Type SIGC07T60NC
VCE 600V
ICn 6A
Die Size 2.6 x 2. Infineon Technologies igbt | |
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Número de pieza | Descripción | Fabricantes | |
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