DataSheet.es    


Datasheet GE09N70 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1GE09N70N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE : GE09N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 600/650/700V RDS(ON) 0.75 ID 9A The GE09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applicatio
GTM
GTM
mosfet


GE0 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1GE01N60N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/01/27 REVISED DATE : GE01N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 8 1.6A Description The GE01N60 provide the designer with the best combination of fast switching. The TO-220 package is universally preferred
GTM
GTM
mosfet
2GE02N60N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/01/27 REVISED DATE :2005/12/12B GE02N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 9 2A Description The GE02N60 provide the designer with the best combination of fast switching. The TO-220 package is universally p
GTM
GTM
mosfet
3GE03N70N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/01/04 REVISED DATE : GE03N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 600/650/700V RDS(ON) 4.0 ID 3.3A The GE03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applicati
GTM
GTM
mosfet
4GE04N70BN-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/01/04 REVISED DATE : GE04N70B N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 650/700V 2.4 4A The GE04N70B series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications
GTM
GTM
mosfet
5GE07N70C-AN-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/03/03 REVISED DATE : GE07N70C-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 650V 1.2 7A The GE07N70C-A is specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220
GTM
GTM
mosfet
6GE08P20P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : GE08P20 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -200V 680m -8A Description The GE08P20 (TO-220 package through-hole version) is available for low-profile applications and suited for low voltage
GTM
GTM
mosfet
7GE09N70N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE : GE09N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 600/650/700V RDS(ON) 0.75 ID 9A The GE09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applicatio
GTM
GTM
mosfet



Esta página es del resultado de búsqueda del GE09N70. Si pulsa el resultado de búsqueda de GE09N70 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap