|
|
PDF CM1200DB-34N Data sheet ( Hoja de datos )
| Número de pieza | CM1200DB-34N | |
| Descripción | HIGH POWER SWITCHING USE INSULATED TYPE | |
| Fabricantes | Mitsubishi Electric | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CM1200DB-34N (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
CM1200DB-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200DB-34N
q IC ................................................................ 1200A
q VCES ....................................................... 1700V
q Insulated Type
q 2-element in a Pack
q Cu Baseplate
q Trench Gate IGBT : CSTBT™
q Soft Reverse Recovery Diode
APPLICATION
Motor control, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
57±0.25
130±0.5
57±0.25
4 - M8 NUTS
Dimensions in mm
42
3
E1
G1
C1
1
E2
C2 G2
4(E1)
E1
2(C2)
C2
G1
G2
C1
3(C1)
1(E2)
E2
CIRCUIT DIAGRAM
6 - M4 NUTS
16±0.2 18±0.2
40±0.2
53±0.2
44±0.2
57±0.2
screwing depth
min. 7.7
11.85±0.2
55.2±0.3
6 - φ 7 MOUNTING HOLES
screwing depth
min. 16.5
11.5±0.2
14±0.2
35±0.2
5±0.2
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
1 page  
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200DB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
103
7
5
3
2 Cies
102
7
5
3
2
101
7 Coes
5
3
2 VGE = 0V, Tj = 25°C
f = 100kHz
10100-1 2 3 5 7100 2 3
5 7101
Cres
2 3 5 7102
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 850V, IC = 1200A
Tj = 25°C
16
12
8
4
0
0 2 4 6 8 10
GATE CHARGE (µC)
1200
1000
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, VGE = ±15V
RG(on) = 1.3Ω, RG(off) = 3.3Ω
Tj = 125°C, Inductive load
Eon
800
Eoff
600
400
Erec
200
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT (A)
2000
1600
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, IC = 1200A
VGE = ±15V
Tj = 125°C, Inductive load
Eon
1200
800
400
0
0
Eoff
Erec
2 4 6 8 10
GATE RESISTANCE (Ω)
12
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CM1200DB-34N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CM1200DB-34N | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |