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Datasheet K4S280832I Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | K4S280832I | (K4S28xx32I) JEDEC standard 3.3V power supply LVTTL compatible K4S280432I K4S280832I K4S281632I
Synchronous DRAM
128Mb I-die SDRAM Specification
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR | Samsung Semiconductor | data |
K4S Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K4S160822D | 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL K4S160822D
CMOS SDRAM
2Mx8 SDRAM
1M x 8bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.0 October 1999
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.0 (Oct. 1999)
K4S160822D
Revision History
Revision 1.0 (October 1999)
CMOS SDRAM
-2-
R Samsung semiconductor data | | |
2 | K4S161622D | 512K x 16Bit x 2 Banks Synchronous DRAM K4S161622D
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) Al Samsung semiconductor data | | |
3 | K4S161622E | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V po Samsung semiconductor data | | |
4 | K4S161622E-TC10 | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V po Samsung semiconductor data | | |
5 | K4S161622E-TC55 | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V po Samsung semiconductor data | | |
6 | K4S161622E-TC60 | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V po Samsung semiconductor data | | |
7 | K4S161622E-TC70 | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V po Samsung semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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