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PDF APTGT100H60T3G Data sheet ( Hoja de datos )
| Número de pieza | APTGT100H60T3G | |
| Descripción | IGBT Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APTGT100H60T3G
Full - Bridge
Trench + Field Stop IGBT®
Power Module
VCES = 600V
IC = 100A* @ Tc = 80°C
13 14
Q1 Q3
18 CR1 CR3
11
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
19
22 7
23 8
26 Q2 CR2 CR4 Q4
27
10
4
3
29 30
15
31 32
R1 16
28 27 26 25 23 22 20 19 18
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
• High level of integration
• Internal thermistor for temperature monitoring
29 16
30 15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
TC = 25°C
TC = 80°C
ICM Pulsed Collector Current
TC = 25°C
VGE Gate – Emitter Voltage
PD Maximum Power Dissipation
TC = 25°C
600
150 *
100 *
200
±20
340
V
A
V
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C 200A @ 550V
* Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater
than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGT100H60T3G
Operating Frequency vs Collector Current
120
100
80 ZCS
VCE=300V
D=50%
RG=3.3Ω
TJ =150°C
ZVS Tc=85°C
60
40
Hard
20 switching
0
0 25 50 75 100 125 150
IC (A)
200
175
150
125
100
75
50
25
0
0
Forward Characteristic of diode
TJ=125°C
TJ =150°C
TJ= 25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
0.7 0.9
Diode
0.6 0.7
0.5
0.5
0.4
0.3 0.3
0.2
0.1
0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT100H60T3G.PDF ] | |
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