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K3126 PDF даташит

Спецификация K3126 изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «MOSFET ( Transistor ) - 2SK3126».

Детали детали

Номер произв K3126
Описание MOSFET ( Transistor ) - 2SK3126
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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K3126 Даташит, Описание, Даташиты
2SK3126
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3126
Switching Regulator Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 0.48 (typ.)
z High forward transfer admittance : |Yfs| = 7.5 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 450 V)
z Enhancement mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
450
450
±30
10
40
40
222
10
4
150
55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal reverse, channel to case
Thermal reverse, channel to ambient
Rth (chc)
Rth (cha)
3.125
62.5
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 , IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-11-06









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K3126 Даташит, Описание, Даташиты
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 450 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 5 A
VDS = 10 V, ID = 5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 10 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
2SK3126
Min Typ. Max Unit
— — ±10
±30 —
— — 100
450 —
2.4 — 3.4
— 0.48 0.65
3.5 7.5
— 1400 —
— 240 —
— 590 —
μA
V
μA
V
V
S
pF
— 35 —
— 50 —
ns
— 80 —
— 260 —
— 35 —
— 19 —
— 16 —
nC
Min Typ. Max Unit
— — 10 A
— — 40 A
— — 1.7 V
— 1400 —
ns
— 14 — μC
K3126
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-06









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K3126 Даташит, Описание, Даташиты
2SK3126
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
20070701-EN
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
3 2006-11-06










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Номер в каталогеОписаниеПроизводители
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