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Datasheet TK65600B-G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | TK65600B-G | CMOS White Led Driver IC
APPLICATION MANUAL
CMOS White LED Driver IC TK65600B, B-G
CONTENTS
1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS 9 . TEST CIRCUIT 10 . TYPICAL CHARACTERISTIC |  Toko | led |
TK6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | TK60A08J1 | MOSFET, Transistor TK60A08J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK60A08J1
Switching Regulator Application
• • • • • • High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.) High forward transfe  Toshiba Semiconductor mosfet | | |
| 2 | TK60D08J1 | Field Effect Transistor TK60D08J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK60D08J1
Switching Regulator Application
• • • • • • High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.) High forward transf Toshiba Semiconductor transistor | | |
| 3 | TK60F08K3 | MOSFET, Transistor TK60F08K3
MOSFETs Silicon N-channel MOS (U-MOS)
TK60F08K3
1. Applications
• • • • Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max Toshiba Semiconductor mosfet | | |
| 4 | TK60J25D | MOSFET, Transistor TK60J25D
MOSFETs Silicon N-Channel MOS (π-MOS)
TK60J25D
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.0285 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, Toshiba Semiconductor mosfet | | |
| 5 | TK60P03M1 | MOSFET, Transistor TK60P03M1
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TK60P03M1
1. Applications
• • DC-DC Converters Desktop Computers
2. Features
(1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 13 nC (typ.) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ.) (VGS = 10 V) Low leakage curr Toshiba Semiconductor mosfet | | |
| 6 | TK60S06K3L | MOSFET, Transistor TK60S06K3L
MOSFETs Silicon N-channel MOS (U-MOS )
TK60S06K3L
1. Applications
• • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA ( Toshiba Semiconductor mosfet | | |
| 7 | TK61023 | VOLTAGE DETECTOR TK610xx
ADVANCED INFORMATION FEATURES
s s s s s Very Low Quiescent Current ( 1 µA) No External Components Built In Hysteresis (5% typ.) ±2 % Voltage Detection Accuracy Miniature Package (SOT23-5)
VOLTAGE DETECTOR APPLICATIONS
s s s s s Battery Powered Systems Wireless Telephones Pagers Personal C  TOKO detector | |
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