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SO2222A PDF даташит

Спецификация SO2222A изготовлена ​​​​«ST Microelectronics» и имеет функцию, называемую «SMALL SIGNAL NPN TRANSISTORS».

Детали детали

Номер произв SO2222A
Описание SMALL SIGNAL NPN TRANSISTORS
Производители ST Microelectronics
логотип ST Microelectronics логотип 

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SO2222A Даташит, Описание, Даташиты
SO2222
SO2222A
SMALL SIGNAL NPN TRANSISTORS
Type
SO2222
SO 2222A
Marking
N13
N20
s SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s MEDIUM CURRENT AF AMPLIFICATION
AND SWITCHING
s PNP COMPLEMENTS ARE RESPECTIVELY
SO2907 AND SO2907A
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
V CBO
V CEO
V EBO
ICM
Ptot
Tstg
Tj
Collector-Emit ter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Peak Current
Total Dissipation at Tc = 25 oC
Storage Temperature
Max. O perating Junction Temperature
March 1996
Value
SO2222
SO 2222A
60 75
30 40
56
0.8
350
-65 to 150
150
Uni t
V
V
V
A
mW
oC
oC
1/5









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SO2222A Даташит, Описание, Даташиты
SO2222/SO2222A
THERMAL DATA
Rthj-amb Thermal Resistance Junction-Ambient
Rth j-SR Thermal Resistance Junction-Substrat e
Mounted on a ceramic substrate area = 15 x 15 x 0.6 mm
Max
Max
350
290
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICEX
IBEX
ICBO
Collector Cut-off
Current (VBE = 0)
Base Cut-off Current
(VBE = 0)
Collector Cut-off
Current (IE = 0)
VCE = 60 V VBE = -3 V
for SO2222A
VCE = 60 V VBE = -3 V
for SO2222A
VCB = rated VCBO
VCB = rated VCBO Tj = 150 oC
IEBO
Emitt er Cut-off Current VEB = 3 V
(IC = 0)
for SO2222
for SO2222A
V( BR)CEO Collect or-Emitter
Breakdown Voltage
(IB = 0)
V( BR)CBO Collect or-Base
Breakdown Voltage
(IB = 0)
IC = 10 mA
for SO2222
for SO2222A
IC = 10 µA
for SO2222
for SO2222A
V(BR)EBO
Em it t er -Base
Breakdown Voltage
(IC = 0)
IE = 10 µA
for SO2222
for SO2222A
VCE(sat)Collect or-Emitter
Saturation Voltage
IC = 150 mA
for SO2222
for SO2222A
IC = 500 mA
for SO2222
for SO2222A
IB = 15 mA
IB = 50 mA
VBE(s at)Collect or-Base
Saturation Voltage
IC = 150 mA
for SO2222
for SO2222A
IC = 500 mA
for SO2222
for SO2222A
IB = 15 mA
IB = 50 mA
hFEDC Current G ain
IC = 0.1 mA VCE = 10 V
IC = 1 mA VCE = 10 V
IC = 10 mA VCE = 10 V
IC = 150 mA VCE = 10 V
IC = 150 mA VCE = 1 V
IC = 500 mA VCE = 10 V
for SO2222
for SO2222A
fT Transit ion F requency IC = 20 mA VCE = 20V f = 100MHz
for SO2222
for SO2222A
CCB Collect or Base
IE = 0
Capacitance
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
VCB = 10 V f = 1 MHz
Min. Typ.
30
40
60
75
5
6
0.6
35
50
75
100
50
30
40
250
300
M a x.
10
20
10
10
30
15
0.4
0.3
1.6
1
1.3
1.2
2.6
2
300
8
Unit
nA
nA
nA
µA
nA
nA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MHz
MHz
pF
2/5









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SO2222A Даташит, Описание, Даташиты
SO2222/SO2222A
ELECTRICAL CHARACTERISTICS (Continued)
Symb ol
P a ram et er
Test Conditions
CEB Emitt er Base
Capacitance
IE = 0 VEB = 0.5 V f = 1MHz
for SO2222
for SO2222A
NF Noise Figure
IC = 0. 1 mA VCE = 10 V f = 1 KHz
f = 200 Hz RG = 1 K
for SO2222A only
hieInput Impedance
VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz
for SO2222A only
hreReverse Voltage Ratio VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz
for SO2222A only
hfeSmall Signal Current VCE = 10 V IC = 1 mA f = 1 KHz
Gain
VCE = 10 V IC = 10 mA f = 1 KHz
for SO2222A only
hoeOutput Admittance
VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz
for SO2222A only
td Delay Time
tr Rise Time
IC = -150 mA VBE = -0.5 V
for SO2222A only
ts Storage Time
IC = 150 mA IB1 = -IB2 = 15mA
tf Fall Time
for SO2222A only
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
Min.
2
0.25
50
75
5
25
Typ .
M a x.
30
25
4
8
1.25
8
4
300
375
35
200
10
25
225
60
Unit
pF
pF
dB
K
K
10-4
10-4
µS
µS
ns
ns
ns
ns
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Номер в каталогеОписаниеПроизводители
SO2222SMALL SIGNAL NPN TRANSISTORSST Microelectronics
ST Microelectronics
SO2222ASMALL SIGNAL NPN TRANSISTORSST Microelectronics
ST Microelectronics

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