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SO2369A PDF даташит

Спецификация SO2369A изготовлена ​​​​«ST Microelectronics» и имеет функцию, называемую «SMALL SIGNAL NPN TRANSISTORS».

Детали детали

Номер произв SO2369A
Описание SMALL SIGNAL NPN TRANSISTORS
Производители ST Microelectronics
логотип ST Microelectronics логотип 

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SO2369A Даташит, Описание, Даташиты
BSV52
SO2369/SO2369A
SMALL SIGNAL NPN TRANSISTORS
Type
BSV52
SO2369
SO 2369A
Marking
B2
N11
N81
s SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s LOW CURRENT, FAST SWITCHING
APPLICATIONS.
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
VCES
V CBO
V CEO
V EBO
ICM
Ptot
Tstg
Tj
Collector-Emit ter Voltage (VBE = 0)
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Peak Current
Total Dissipation at Tc = 25 oC
Storage Temperature
Max. O perating Junction Temperature
March 1996
Value
SO2369/A
BSV52
40 20
40 20
15 12
4.5 5
0.2
200
-65 to 150
150
Uni t
V
V
V
V
A
mW
oC
oC
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SO2369A Даташит, Описание, Даташиты
BSV52/SO2369/SO2369A
THERMAL DATA
Rthj-amb Thermal Resistance Junction-Ambient
Rth j-SR Thermal Resistance Junction-Substrat e
Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm
Max
Max
620
400
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 20 V
for SO2369/SO2369A
VCB = 10 V
for BSV52
VCB = 10 V
Tj = 150 oC
for BSV52
ICES Collect or Cut-off
Current (VBE = 0)
V(BR)CES Collect or-Emitter
Breakdown Voltage
(IB = 0)
VCB = 20 V
for SO2369A
IC = 10 µA
for SO2369/SO2369A
for BSV52
V( BR)CEO Collect or-Emitter
Breakdown Voltage
(IB = 0)
V( BR)CBO Collect or-Base
Breakdown Voltage
(IB = 0)
IC = 10 mA
for SO2369/SO2369A
for BSV52
IC = 10 µA
for SO2369/SO2369A
for BSV52
V(BR)EBO
Em it t er -Base
Breakdown Voltage
(IC = 0)
IE = 10 µA
for SO2369/SO2369A
for BSV52
VCE(sat)Collect or-Emitter
Saturation Voltage
IC = 10 mA IB = 0.3 mA
for BSV52
IC = 10 mA IB = 1 mA
for SO2369A
for BSV52
IC = 30 mA IB = 3 mA
for SO2369 BSV52
IC = 50 mA IB = 5 mA
for BSV52
IC = 100 mA IB = 10 mA
for SO2369A
VBE(s at)Collect or-Base
Saturation Voltage
IC = 10 mA
IC = 30 mA
for SO2369A
IC = 50 mA
for BSV52
IC = 100 mA
for SO2369A
IB = 1 mA
IB = 3 mA
IB = 5 mA
IB = 10 mA
hFEDC Current G ain
IC =1mA VCE =1V f or BSV52
IC =10mA VCE =0.35V for SO2369A
IC =10mA VCE =1V for All typ es
IC =30mA VCE =0.4V for SO2369A
IC =50mA VCE =1V for BSV52
IC =100mA VCE =1V for SO2369A
IC =100mA VCE =2V for SO2369
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
Min.
40
20
15
12
40
20
4.5
5
0.7
25
40
40
30
25
20
20
Typ .
M a x.
400
100
5
400
0.3
0.2
0.25
0.25
0.4
0.5
0.85
1.15
1.2
1.6
120
120
Unit
nA
nA
µA
nA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
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SO2369A Даташит, Описание, Даташиты
BSV52/SO2369/SO2369A
ELECTRICAL CHARACTERISTICS (Continued)
Symb ol
P a ram et er
fT Transit ion F requency
CCB Collect or Base
Capacitance
CEB Emitt er Base
Capacitance
ton Turn On Time
ts Storage Time
Test Conditions
IC = 10 mA VCE = 10V f = 100MHz
for SO2369A
for BSV52/SO2369
IE = 0 VCE = 5 V f = 1 MHz
IC = 0 VEB = 1 V f = 1 MHz
for BSV52
IC = 10 mA VBE = -0. 5 V
IB = 3 mA
IC = 10 mA IB1 = -IB2 = 10mA
toff Turn Off T ime
IC = 10 mA IB1 = 3 mA
IB2 = -1.5 mA
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
Min. Typ . Max. Un it
500 MHz
400 MHz
4 pF
4.5 pF
12 ns
13 ns
18 ns
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Номер в каталогеОписаниеПроизводители
SO2369SMALL SIGNAL NPN TRANSISTORSST Microelectronics
ST Microelectronics
SO2369ASMALL SIGNAL NPN TRANSISTORSST Microelectronics
ST Microelectronics

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