DataSheet26.com

TIG032TS PDF даташит

Спецификация TIG032TS изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «N-Channel IGBT Light-Controlling Flash Applications».

Детали детали

Номер произв TIG032TS
Описание N-Channel IGBT Light-Controlling Flash Applications
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

5 Pages
scroll

No Preview Available !

TIG032TS Даташит, Описание, Даташиты
www.DataSheet4U.com
Ordering number : ENA0383
TIG032TS
SANYO Semiconductors
DATA SHEET
TIG032TS
N-Channel IGBT
Light-Controlling Flash Applications
Features
Low-saturation voltage.
Low voltag drive (2.5V).
Enhansment type.
Built-in Gate-to-Emitter protection diode.
Mounting Height 1.1mm, Mounting Area 19.2mm2.
dv / dt guarantee.*
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Maximum Collector-to-Emitter dv / dt
Channel Temperature
Storage Temperature
Symbol
VCES
VGES
VGES
ICP1
ICP2
dVCE / dt
Tch
Tstg
Conditions
PW1ms
PW500µs, duty cycle0.5%, CM=400µF, VGE=2.5V
PW500µs, duty cycle0.5%, CM=400µF, VGE=4V
VCE320V, starting Tch=25°C
Ratings
400
±6
±8
150
180
400
150
--40 to +150
Unit
V
V
V
A
A
V / µs
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min typ
max
Unit
Collector-to-Emitter Breakdown Voltage
V(BR)CES IC=2mA, VGE=0V
400 V
Collector-to-Emitter Cutoff Current
ICES
VCE=320V, VGE=0V
10 µA
Gate-to-Emitter Leakage Current
IGES
VGE=±6V, VCE=0V
±10 µA
Marking : G032
Continued on next page.
* : Conduct 100% screening of dv / dt (slope of collector voltage at the time of turn-off) by dv / dt>400V/µs.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41107PJ TI IM TC-00000663 No. A0383-1/5









No Preview Available !

TIG032TS Даташит, Описание, Даташиты
www.DataSheet4U.com
TIG032TS
Continued from preceding page.
Parameter
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
VGE(off)
VCE(sat)1
VCE(sat)2
Cies
Coes
Cres
VCE=10V, IC=1mA
IC=150A, VGE=2.5V
IC=180A, VGE=4V
VCE=10V, f=1MHz
VCE=10V, f=1MHz
VCE=10V, f=1MHz
min
0.4
Ratings
typ
3.4
3.3
5100
59
43
max
1.0
4.8
4.7
Unit
V
V
V
pF
pF
pF
Package Dimensions
unit : mm (typ)
7006A-007
3.0
85
0.125
14
0.25
0.65
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
SANYO : TSSOP8
Electrical Connection
8 765
1 234
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
Top view
Large Current R Load Screening Circuit
RL=1.7
RG=80
+
CM=400µF
4.0V
0V
100k
TIG032TS
VCC=325V
Note1. Gate Series Resistance RG47is recommended for prolection purpose at the time of turn OFF. However,
if dv / dt400V / µs is satisfied at customer’s actual set evaluation, RG<47can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 400V / µs to protect the device when it is turned off.
No. A0383-2/5









No Preview Available !

TIG032TS Даташит, Описание, Даташиты
www.DataSheet4U.com
TIG032TS
200
Tc=25°C
180
160
140
IC -- VCE
3.0V
2.5V
120
100
1.8V
80
60
40
20
0
0 1.0 2.0 3.0 4.0
Collector-to-Emitter Voltage, VCE -- V
VCE -- VGE
6.0
Tc= --25°C
5.5
5.0
IT12265
5.0
4.5
4.0
3.5
IC=180A
3.0
150A
2.5
130A
2.0
1.5
1.0
012345
Gate-to-Emitter Voltage, VGE -- V
VCE -- VGE
6.0
Tc=75°C
5.5
6
IT12267
5.0
4.5
4.0
3.5 IC=180A
3.0 150A
2.5 130A
2.0
1.5
1.0
012345
Gate-to-Emitter Voltage, VGE -- V
VCE(sat) -- Tc
5.0
VGE=4V
4.5
6
IT12269
4.0
3.5 IC=180A
3.0 150A
130A
2.5
2.0
1.5
1.0
0.5
0
--50
--25
0 25 50 75 100
Case Temperature, Tc -- °C
125 150
IT12271
200
Tc=25°C
180 VCE=5V
160
IC -- VGE
140
120
100
80
60
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Gate-to-Emitter Voltage, VGE -- V
VCE -- VGE
6.0
Tc=25°C
5.5
3.5 4.0
IT12266
5.0
4.5
4.0
3.5 IC=180A
3.0 150A
130A
2.5
2.0
1.5
1.0
012345
Gate-to-Emitter Voltage, VGE -- V
VCE(sat) -- Tc
8
VGE=2.5V
7
6
IT12268
6
5
4 IC=150A
130A
3
2
1
0
--50 --25
0.8
0 25 50 75 100
Case Temperature, Tc -- °C
VGE(off) -- Tc
125 150
IT12270
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
--50 --25
0 25 50 75 100
Case Temperature, Tc -- °C
125 150
IT12272
No. A0383-3/5










Скачать PDF:

[ TIG032TS.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
TIG032TSN-Channel IGBT Light-Controlling Flash ApplicationsSanyo Semicon Device
Sanyo Semicon Device

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск