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GP9962 PDF даташит

Спецификация GP9962 изготовлена ​​​​«GTM» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв GP9962
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители GTM
логотип GTM логотип 

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GP9962 Даташит, Описание, Даташиты
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/08/08
REVISED DATE :
GP9962
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
40V
28m
7A
Description
The GP9962 provides the designer with the best combination of fast switching, ruggedized device design, ultra
low on-resistance and cost-effectiveness.
Features
*Low On-Resistance
*Single Drive Requirement
Package Dimensions
D
GAUGE PLANE
SEATING PLANE
ZZ
be
b
SECTION Z - Z
DIP-8
REF.
A
A1
A2
b
b1
b2
b3
c
Millimeter
Min. Max.
- 0.5334
0.381
-
2.921
4.953
0.356
0.559
0.356
0.508
1.143
1.778
0.762
1.143
0.203
0.356
REF.
c1
D
E
E1
e
HE
L
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3,VGS@10V
Continuous Drain Current3,VGS@10V
Pulsed Drain Current1,2
Total Power Dissipation
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
40
20
7
5.5
20
2
0.016
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient 3
Max.
Symbol
Rthj-a
Value
62.5
Millimeter
Min. Max.
0.203
0.279
9.017
10.16
6.096
7.112
7.620
8.255
2.540 BSC
- 10.92
2.921
3.810
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4









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GP9962 Даташит, Описание, Даташиты
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ISSUED DATE :2005/08/08
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
40
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.1
- V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs
- 11 -
S VDS=10V, ID=7A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=40V, VGS=0
- 25 uA VDS=32V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 28 m VGS=10V, ID=7A
- 40
VGS=4.5V, ID=5A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 13 20
ID=7A
Qgs - 4 - nC VDS=32V
Qgd - 7 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 10 -
VDS=20V
Tr
-8-
ID=1A
ns VGS=10V
Td(off) - 26 -
RG=3.3
Tf - 9 -
RD=20
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1170 1870
VGS=0V
- 180 -
pF VDS=25V
- 116 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
24
18
Max.
1.2
-
-
Unit Test Conditions
V IS=1.7A, VGS=0V
ns IS=7A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Mounted on 1 in2 copper pad of FR4 board; 90 /W when mounted on Min. copper pad.
2/4









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GP9962 Даташит, Описание, Даташиты
www.DataSheet4U.com
Characteristics Curve
ISSUED DATE :2005/08/08
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4










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