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TLP350 PDF даташит

Спецификация TLP350 изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «Inverter».

Детали детали

Номер произв TLP350
Описание Inverter
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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TLP350 Даташит, Описание, Даташиты
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Preliminary
TOSHIBA Photocoupler GaAAs IRED + Photo IC
TLP350
Inverter for Air Conditioner
IGBT/Power MOS FET Gate Drive
Industrial Inverter
TLP350
Unit: mm
The TOSHIBA TLP350 consists of a GaAAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP350 is suitable for gate driving circuit of IGBT or power MOS FET..
Peak output current: IO = ±2.0 A (max)
Guaranteed performance over temperature: 40 to 100°C
Supply current:ICC = 2 mA (max)
Power supply voltage: VCC = 15 to 30 V
Threshold input current : IFLH = 5 mA (max)
Switching time (tpLH/tpHL) : 500 ns (max)
Common mode transient immunity: 15 kV/µs
Isolation voltage: 3750 Vrms
Truth Table
Input
H
L
LED
ON
OFF
Tr1
ON
OFF
Tr2
OFF
ON
Output
H
L
JEDEC
JEITA
TOSHIBA
11-10C4
Weight: 0.54 g (typ.)
Pin Configuration (top view)
1 8 1: NC
2: Anode
2
7
3: Cathode
4: NC
5: GND
3 6 6: VO (output)
7: NC
4 5 8: VCC
Schematic
IF
2+
VF
3
ICC 8
(Tr1)
VCC
IO 6
(Tr2)
VO
5
GND
A 0.1 µF bypass capacitor must be connected
between pin 8 and 5. (See Note 6)
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TLP350 Даташит, Описание, Даташиты
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TLP350
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Forward current
Forward current derating (Ta 85°C)
Peak transient forward current
Reverse voltage
Junction temperature
“H” peak output current
“L” peak output current
Output voltage
Supply voltage
Junction temperature
Operating frequency
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 minute, R.H. 60%)
(Note 1)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 4)
(Note 5)
(Note 6)
IF
IF/Ta
IFP
VR
Tj
IOPH
IOPL
VO
VCC
Tj
f
Tstg
Topr
Tsol
BVS
20
0.54
1
5
125
2.0
2.0
35
35
125
55 to 125
40 to 100
260
3750
mA
mA/°C
A
V
°C
A
A
V
V
°C
kHz
°C
°C
°C
Vrms
Note 1: Pulse width PW 1 µs, 300 pps
Note 2: Exponential waveform pulse width PW µs, f
kHz
Note 3: Ta 100 °C
Note 4: Exponential waveform IOPH A (µs), IOPL + A (µs),Ta = °C
Note 5: It is 2 mm or more from a lead root.
Note 6: Device considerd a two terminal device: pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted
together.
Note 7: A ceramic capacitor(0.1 µF) should be connected from pin 8 to pin 5 to stabilize the operation of the high
gain linear amplifier. Failure to provide the bypassing may impair the switching property.
The total lead length between capacitor and coupler should not exceed 1 cm.
Recommended Operating Conditions
Characteristics
Symbol
Min Typ. Max Unit
Input current, ON
Input voltage, OFF
Supply voltage
Peak output current
Operating temperature
(Note 8)
IF (ON)
7.5
10 mA
VF (OFF) 0 0.8 V
VCC
15 30 V
IOPH/IOPL
 ±1.0 A
Topr 40 100 °C
Note 8: Input signal rise time (fall time) < 0.5 µs.
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TLP350 Даташит, Описание, Даташиты
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TLP350
Electrical Characteristics (Ta = −40 to 100°C, unless otherwise specified)
Characteristics
Forward voltage
Temperature coefficient of forward
voltage
Input reverse current
Input capacitance
Output current
(Note 9)
“H” Level
“L” Level
Output voltage
Supply current
Threshold input current
“H” Level
“L” Level
“H” Level
“L” Level
LH
Threshold input voltage
Supply voltage
HL
UVLO thresh hold
Symbol
VF
Test
Circuit
Test Condition
IF = 5 mA, Ta = 25°C
VF/Ta IF = 5 mA
IR
CT
IOPH1
IOPH2
IOPL1
IOPL2
VOH
VOL
ICCH
ICCL
IFLH
VFHL
VCC
VUVLO+
VUVLO-
VR = 5 V, Ta = 25°C
V = 0 , f = 1 MHz,Ta = 25°C
1
VCC = 30 V
IF = 5 mA
V8-6 = 4.0 V
V8-6 =
2
VCC = 30 V
IF = 0 mA
V6-5 = 2.0 V
V6-5 =
3 VCC 1= +15 V
4 VEE 1= -15 V
IO = −100 mA,
IF = 5 mA
IO = 100 mA,
VF = 0.8 V
5 VCC = 30 V
6 VO open
IF = 10 mA
IF = 0 mA
VCC 1= +15 V
VEE 1= -15 V, VO > 0 V
VCC 1= +15 V
VEE 1= -15 V, VO < 0 V

VO > 2.5 V , IF = 5 mA ,
IO=100 mA
Min Typ.* Max Unit
1.55 1.70 V
 −2.0 mV/°C
  10
45
1.0 1.5
1.0 2.0
µA
pF
A
11
V
1.0
2.0
mA
2.0
5 mA
0.8   V
15 30 V
11.0 13.5 V
9.5 12.0 V
*: All typical values are at Ta = 25°C
Note 9: Duration of IO time 50 µs
Note 10: This product is more sensitive than the conventional product to static electricity (ESD) because of a lowest
power consumption design.
General precaution to static electricity (ESD) is necessary for handling this component.
Isolation Characteristics (Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Isolation voltage
Symbol
CS
RS
BVS
Test Condition
Min. Typ. Max. Unit
V = 0,f = 1MHz
VS = 500 V, Ta = 25°C,
R.H. 60%
AC,1 minute
AC,1 second,in oil
DC,1 minute,in oil
(Note6)
0.8
1×1012 1014
(Note6)
3750
10000
10000
pF
Vrms
Vdc
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