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DPG60C300HB PDF даташит

Спецификация DPG60C300HB изготовлена ​​​​«IXYS» и имеет функцию, называемую «High Performance Fast Recovery Diode».

Детали детали

Номер произв DPG60C300HB
Описание High Performance Fast Recovery Diode
Производители IXYS
логотип IXYS логотип 

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DPG60C300HB Даташит, Описание, Даташиты
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DPG 60 C 300HB
HiPerFRED
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number (Marking on product)
DPG 60 C 300HB
12
3
VRRM = 300 V
IFAV = 2x 30 A
t rr =
35 ns
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package:
TO-247AD
Industry standard outline
Epoxy meets UL 94V-0
RoHS compliant
Symbol
VRRM
IR
VF
I FAV
VF0
rF
R thJC
TVJ
Ptot
IFSM
IRM
t rr
CJ
EAS
IAR
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
VR =
VR =
IF =
IF =
300 V
300 V
30 A
60 A
IF = 30 A
IF = 60 A
rectangular, d = 0.5
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25 °C
TVJ = 25 °C
TVJ = 150 °C
TVJ = 25 °C
TVJ = 150 °C
TC = 135 °C
TVJ = 175 °C
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
tp = 10 ms (50 Hz), sine
IF = 30 A;
-di /dt = 200 A/µs
F
VR = 100 V
VR = 150 V; f = 1 MHz
I AS = 9 A; L = 100 µH
VA = 1.5·VR typ.; f = 10 kHz
TC = 25 °C
TVJ = 45 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 25 °C
Ratings
min. typ. max.
300
1
0.1
1.34
1.63
1.06
1.39
30
0.70
10.5
0.95
-55 175
160
300
3
35
40
4
0.9
Unit
V
µA
mA
V
V
V
V
A
V
m
K/W
°C
W
A
A
A
ns
ns
pF
mJ
A
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified









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DPG60C300HB Даташит, Описание, Даташиты
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DPG 60 C 300HB
Symbol
IRMS
R thCH
MD
FC
T stg
Weight
Definition
RMS current
thermal resistance case to heatsink
mounting torque
mounting force with clip
storage temperature
Conditions
per pin*
Ratings
min. typ. max.
50
0.25
0.8 1.2
20 120
-55 150
6
Unit
A
K/W
Nm
N
°C
g
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines TO-247AD
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
5.49
6.2
1.65
-
2.13
4.5
1.0
10.8
1.4
11.0
4.7 5.3
0.4 0.8
1.5 2.49
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
- 0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified









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DPG60C300HB Даташит, Описание, Даташиты
www.DataSheet4U.com
DPG 60 C 300HB
80
A
70
60
IF
50
40
30
20
10
TVJ = 150°C
125°C
25°C
700
µC
TVJ = 125°C
600 VR = 200 V
Qr 500
400
IF = 60 A
30 A
15 A
300
200
100
30
A
25
IRM
20
15
TVJ = 125°C
VR = 200 V
IF = 60 A
30 A
15 A
10
5
0
0.0 0.4 0.8 1.2 1.6 V
VF
Fig. 1 Forward current IF vs. VF
0
100 A/µs 1000
-diF/dt
Fig. 2 Typ. reverse recovery charge Qr
versus -diF/dt
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 3 Typ. peak reverse current IRM
versus -diF/dt
1.4
1.2
Kf
1.0
VR = 200 V
IF = 30 A
diF/dt = 500 A/µs
100
ns
90
trr 80
70
TVJ = 125°C
VR = 200 V
0.8 60
0.6 IRM
0.4
Qrr
0.2
0
40 80 120 C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
50
40 IF = 60 A
30
30 A
15 A
20
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 5 Typ. recovery time trr vs. -diF/dt
700
ns
600
tfr 500
tfr
400
TVJ = 125°C
VR = 200 V
IF = 30 A
35
V
30
VFR
25
VFR
20
300 15
200 10
100 5
00
0 200 400 600 800 A1/0µ0s0
diF/dt
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF/dt
10
K/W
1
ZthJC
0.1
0.01
Constants for ZthJC calculation:
i Rthi
[K/W]
1 0.505
2 0.195
3 0.250
ti
[s]
0.005
0.0003
0.041
0.001
0.00001 0.0001 0.001
0.01
0.1
DPG60C300QB
1 s 10
t
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified










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