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Datasheet IHW30N100R Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IHW30N100R | Reverse Conducting IGBT
Soft Switching Series
IHW30N100R q
C
Reverse Conducting IGBT with monolithic body diode
Features: • 1.5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1000 V |  Infineon Technologies | igbt |
IHW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IHW15N120E1 | IGBT, Insulated Gate Bipolar Transistor ResonantSoft-SwitchingSeries
ReverseconductingIGBTwithmonolithicbodyDiodeforsoft-switching
IHW15N120E1
Datasheet IndustrialPowerControl
ResonantSoft-SwitchingSeries
IHW15N120E1
ReverseconductingIGBTwithmonolithicbodydiode
Features:
•Powerfulmonolithicbodydiodewithlo  Infineon igbt | | |
| 2 | IHW15N120R | Reverse Conducting IGBT with monolithic body diode
Soft Switching Series
IHW15N120R q
C
Reverse Conducting IGBT with monolithic body diode
Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - ver Infineon Technologies igbt | | |
| 3 | IHW15N120R2 | Reverse Conducting IGBT IHW15N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distrib Infineon igbt | | |
| 4 | IHW15N120R3 | Reverse conducting IGBT ResonantSwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW15N120R3
Datasheet IndustrialPowerControl
ResonantSwitchingSeries
IHW15N120R3
ReverseconductingIGBTwithmonolithicbodydiode
Features:
•Powerfulmonolithicbodydiodewithlowforwardvoltage designedfo Infineon Technologies igbt | | |
| 5 | IHW15T120 | IGBT in Trench and Fieldstop technology
IHW15T120
^
Soft Switching Series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
C
• • •
• • •
Short circuit withstand time – 10µs Designed for : - Soft Switching Applications - Induction Heati Infineon Technologies igbt | | |
| 6 | IHW20N120R | Reverse Conducting IGBT
IHW20N120R
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tig Infineon Technologies igbt | | |
| 7 | IHW20N120R2 | Reverse Conducting IGBT IHW20N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distrib Infineon Technologies igbt | | |
| 8 | IHW20N120R3 | Reverse conducting IGBT www.DataSheet.co.kr
IHW20N120R3
IH-series
Reverse conducting IGBT with monolithic body diode
Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop ® technology applications offers: - very tight parameter distribution - high ruggedn Infineon Technologies igbt | | |
| 9 | IHW20N120R5 | Reverse Conducting IGBT ResonantSwitchingSeries
ReverseConductingIGBTwithmonolithicbodydiode
IHW20N120R5
Datasheet IndustrialPowerControl
ResonantSwitchingSeries
IHW20N120R5
ReverseConductingIGBTwithmonolithicbodydiode
Features:
•Powerfulmonolithicbodydiodewithlowforwardvoltage designedfo Infineon igbt | |
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