|
|
PDF CP757 Data sheet ( Hoja de datos )
| Número de pieza | CP757 | |
| Descripción | (CP756 / CP757) PNP SILICON PLANAR EPITAXIAL TRANSISTORS | |
| Fabricantes | CDIL | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CP757 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
CP756 / CP757
TO-92
Plastic Package
EBC
Medium Power Transistors are Designed for Applications Requiring High Breakdown Voltage and Low Saturation Voltage
Complementary CN656 and CN657
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC )
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Pulse Current
Collector Current Continuous
Power Dissipation at Ta=25ºC
Derate Above 25ºC
Power Dissipation at Ta=25ºC
Power Dissipation at TC=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
*ICM
IC
PD
**PD
PD
Tj, Tstg
CP756
200
200
5
1.0
0.5
0.9
7.2
1.1
2.2
CP757
300
300
- 65 to +150
UNIT
V
V
V
A
A
W
mW/ºC
W
W
ºC
Thermal Resistance
Junction to Ambient
Junction to Ambient
Junction to Case
Rth (j-a) 1
Rth (j-a) 2+
Rth (j-c)
138.8
113.6
56.8
* Consult safe operating area graph for conditions.
**Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm, copper
2+ Device mounted on P.C.B with copper equal to 1sq.inch. Minimum
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Base Voltage
VCBO
IC=100µA, IE=0
CP756
CP757
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
CP756
CP757
Emitter Base Voltage
VEBO
IE=100µA, IC=0
Collector Cut Off Current
ICBO
VCB=160V, IE=0
CP756
VCB=200V, IE=0
CP757
Emitter Cut Off Current
IEBO
VEB=3V, IC=0
Collector Emitter Saturation Voltage *** VCE (sat)
IC=100mA, IB=10mA
Base Emitter Saturation Voltage
*** VBE (sat)
IC=100mA, IB=10mA
Base Emitter On Voltage
*** VBE (on)
IC=100mA,VCE=5V
DC Current Gain
*** hFE
IC=100mA,VCE=5V
IC=10mA,VCE=5V
Transition Frequency
fT IC=10mA, VCE=20V, f=20MHz
Output Capacitance
Cobo
VCB=20V, IE=0, f=1MHz
MIN
200
300
200
300
5.0
50
40
30
MAX
100
100
100
0.5
1.0
1.0
20
***Pulse conditions. Pulse Width=300µs. Duty Cycle<2%
CP756_757Rev_2 120406E
ºC/W
ºC/W
ºC/W
UNIT
V
V
V
V
V
nA
nA
nA
V
V
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CP757.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CP753V | Small Signal Transistors PNP - High Current Transistor Chip |  Central Semiconductor |
| CP756 | (CP756 / CP757) PNP SILICON PLANAR EPITAXIAL TRANSISTORS | CDIL |
| CP757 | (CP756 / CP757) PNP SILICON PLANAR EPITAXIAL TRANSISTORS | CDIL |
| CP757X | Small Signal MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip | Central Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |