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PDF SKW20N60HS Data sheet ( Hoja de datos )
| Número de pieza | SKW20N60HS | |
| Descripción | High Speed IGBT | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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SKW20N60HS
^
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3-21
Type
VCE
IC
Eoff Tj Marking
Package
SKW20N60HS
600V 20 240µJ 150°C K20N60HS PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj ,
Tstg
Tj(tl)
-
600
36
20
80
80
40
20
80
±20
±30
10
178
-55...+150
175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.2 June 06
1 page  
SKW20N60HS
^
80A
70A TC=80°C
60A
50A
40A TC=110°C
30A Ic
20A
10A Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
Figure 1.
f, SWITCHING FREQUENCY
Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 16Ω)
100A
10A
1A
tP=4µs
15µs
50µs
200µs
1ms
DC
0.1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
180W
160W
140W
120W
100W
80W
60W
40W
20W
0W
25°C
50°C
75°C 100°C 125°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
30A
20A
10A
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Power Semiconductors
5
Rev. 2.2 June 06
5 Page 
SKW20N60HS
^
TJ=-55°C
25°C
150°C
30A
20A
10A
0A
0,0V
0,5V
1,0V
1,5V
VF, FORWARD VOLTAGE
Figure 25. Typical diode forward current as
a function of forward voltage
2,0V
1,8V
IF=40A
1,6V
1,4V
IF=20A
1,2V
IF=10A
-50°C
0°C
50°C
100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 26. Typical diode forward voltage as a
function of junction temperature
100K/W D=0.5
0.2
0.1
0.05
1 0 -1K /W
0.02
0.01
R,(K/W)
0.311
0.271
0.221
0.584
0.314
R1
τ, (s)
7.83*10-2
1.21*10-2
1.36*10-3
1.53*10-4
2.50*10-5
R2
single pulse
C1=τ1/R1 C2=τ2/R2
1 0 -2K /W
1µs 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
Power Semiconductors
11
Rev. 2.2 June 06
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet SKW20N60HS.PDF ] | |
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