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PDF AP9575H Data sheet ( Hoja de datos )
| Número de pieza | AP9575H | |
| Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP9575H (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Advanced Power
Electronics Corp.
AP9575H/J
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
▼ Simple Drive Requirement
www.DataSheet▼4U.cFoamst Switching Characteristic
Description
G
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9575J) is available for low-profile applications.
BVDSS
RDS(ON)
ID
-60V
90mΩ
-15A
GD
S TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
-60
±25
-15
-9.5
45
36
0.29
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
3.5
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
200211041
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP9575H.PDF ] | |
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