(PDF) AP9962M Datasheet - Power MOSFET ( Transistor )

Número de pieza	AP9962M
Descripción	Power MOSFET ( Transistor )
Fabricantes	Advanced Power Electronics
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No Preview Available ! AP9962M Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Single Drive Requirement www.DataSheet4U▼.comSurface Mount Package D2 D2 D1 D1 SO-8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2 G1 S2 S1 BVDSS RDS(ON) ID 40V 25mΩ 7A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 G1 G2 S1 D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 40 ±20 7 5.5 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 62.5 Unit ℃/W Data and specifications subject to change without notice 200407031 1 page

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PDF AP9962M Data sheet ( Hoja de datos )