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Datasheet MTW32N20E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MTW32N20E | TMOS POWER FET MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW32N20E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and co |  Motorola Semiconductors | data |
| 2 | MTW32N20E | Power MOSFET, Transistor MTW32N20E
Power MOSFET 32 Amps, 200 Volts
N−Channel TO−247
This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high sp |  ON Semiconductor | mosfet |
MTW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MTW10N100E | TMOS POWER FET w
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Motorola Semiconductors data | | |
| 2 | MTW10N100E | Power MOSFET, Transistor MTW10N100E co
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Preferred Device
Power MOSFET t e 10 Amps, e 1000 Volts
N–Channel TO–247
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed ON Semiconductor mosfet | | |
| 3 | MTW10N40E | TMOS E-FET POWER FIELD EFFECT TRANSISTOR w
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| 4 | MTW14N50E | TMOS POWER FET w
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Motorola Semiconductors data | | |
| 5 | MTW14N50E | Power MOSFET, Transistor MTW14N50E
4 Power MOSFET t 14 Amps, 500 Volts ee
N–Channel TO–247
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy ON Semiconductor mosfet | | |
| 6 | MTW16N40E | TMOS POWER FET w
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Motorola Semiconductors data | | |
| 7 | MTW16N40E | Power MOSFET, Transistor MTW16N40E
4 Power MOSFET t 16 Amps, 400 Volts ee
N–Channel TO–247
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy ON Semiconductor mosfet | |
| Esta página es del resultado de búsqueda del MTW32N20E. Si pulsa el resultado de búsqueda de MTW32N20E se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
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