(PDF) SI6969DQ Datasheet - Dual P-Channel 1.8-V (G-S) MOSFET

Número de pieza	SI6969DQ
Descripción	Dual P-Channel 1.8-V (G-S) MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! Si6969DQ Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) 0.034 @ VGS = - 4.5 V 0.050 @ VGS = - 2.5 V 0.075 @ VGS = - 1.8 V ID (A) "4.6 "3.8 "3.0 www.DataSheet4U.com TSSOP-8 D1 1 D S1 2 S1 3 Si6969DQ G1 4 Top View 8 D2 7 S2 6 S2 5 G2 S1 G1 S2 G2 D1 D2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS - 12 "8 Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg "4.6 "3.8 "30 - 1.25 1.1 0.72 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70828 S-59527—Rev. A, 19-Oct-98 t v 10 sec Steady State Symbol RthJA Typical 115 Maximum 110 Unit _C/W www.vishay.com 2-1 1 page

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PDF SI6969DQ Data sheet ( Hoja de datos )