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Datasheet 14N05L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 14N05L | RFD14N05L RFD14N05L, RFD14N05LSM, RFP14N05L
Data Sheet November 2004
14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilizati |  Fairchild Semiconductor | data |
14N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 14N03L | IPD14N03L IPD14N03L OptiMOS® Buck converter series
Feature
• N-Channel
Product Summary VDS RDS(on) ID 30 13.5 30
P- TO252 -3-11
V mΩ A
• Logic Level • Low On-Resistance RDS(on)
• Excellent Gate Charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175°C operat  Infineon Technologies data | | |
| 2 | 14N05 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
14N05
·FEATURES ·Drain Current ID= 14A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 50V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.1Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch regulators ·Switching c  Inchange Semiconductor mosfet | | |
| 3 | 14N05L | RFD14N05L RFD14N05L, RFD14N05LSM, RFP14N05L
Data Sheet November 2004
14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilizati Fairchild Semiconductor data | | |
| 4 | 14N361K | Varistor 久尹股份有限公司
JOYIN CO., LTD.
Electrical Characteristics
Maximum Allowable Voltage Type No. 14N361K ACrms (V) 230 DC (V) 300 (V) 360 Tolerance ±10% Varistor Voltage V /1mA Maximum Clamping Voltage V@50A (V) 595 Withstanding Surge Current 1 Time 2 Times (A) 4500 (A) 2500 (W) 0.6 (J) 104  JOYIN varistor | | |
| 5 | 14N36GVL | HGTP14N36G3VL HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
December 2001
14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
• Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC
• Ignitio Fairchild Semiconductor data | | |
| 6 | 14N40K-MT | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
14N40K-MT
Preliminary
14A, 400V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 14N40K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and fast  Unisonic Technologies mosfet | | |
| 7 | 14N471K | Metal Oxide Varistor 14mm Dusc METAL OXIDE VARISTOR 14mm Disc
Part Number Maximum Allowable Voltage ACrms DC Varistor Voltage (V 1mA) Tolerance Maximum Clamping Voltage V 5A UL Withstanding Surge Current Rated Energy Typical Wattage 10/1000 Capacitance µs CSA VDE
JVR-14N180K JVR-14N220K JVR-14N270K JVR-14N3  RFE varistor | | |
| 8 | 14N50 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
14N50
Preliminary
14A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 14N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It Unisonic Technologies mosfet | | |
| 9 | 14N65K-MT | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
14N65K-MT
Preliminary
14A, 650V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 14N65K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and fast Unisonic Technologies mosfet | |
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