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Datasheet IXSM40N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IXSM40N60 | Low VCE(sat) IGBT VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V
I C25 75 A 75 A
VCE(sat) 2.5 V 3.0 V
Short Circuit SOA Capability
Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25° |  IXYS Corporation | igbt |
| 2 | IXSM40N60A | Low VCE(sat) IGBT VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V
I C25 75 A 75 A
VCE(sat) 2.5 V 3.0 V
Short Circuit SOA Capability
Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25° | IXYS Corporation | igbt |
IXS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IXSA10N60B2D1 | High Speed IGBT High Speed IGBT with Diode
Short Circuit SOA Capability
Preliminary Data Sheet
IXSA 10N60B2D1 IXSP 10N60B2D1
VCES = 600 V = 20 A I C25 V CE(sat) = 2.5 V
D1 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = IXYS Corporation igbt | | |
| 2 | IXSA15N120B | High Voltage IGBT Advance Technical Information
HIGH Voltage IGBT
IXSA 15N120B IXSP 15N120B
"S" Series - Improved SCSOA Capability
VCES IC25 VCE(sat)
=1200 V = 30 A = 3.4 V
Symbol
V
CES
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C T IXYS Corporation igbt | | |
| 3 | IXSA16N60 | Short Circuit SOA Capability Preliminary Data Sheet
Low VCE(sat) IGBT
Short Circuit SOA Capability
IXSA 16N60 IXSP 16N60
V CES = 600V I C25 = 16A VCE(sat)typ = 1.8V
Symbol
V
CES
Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 IXYS Corporation data | | |
| 4 | IXSA20N60B2D1 | High Speed IGBT High Speed IGBT
IXSA 20N60B2D1 IXSP 20N60B2D1
Short Circuit SOA Capability
Preliminary Data Sheet
VCES = 600 V IC25 = 35 A VCE(sat) = 2.5 V
Symbol
Test Conditions
VCES VCGR
VGES VGEM
IC25 IC110 IF(110) ICM
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transie IXYS Corporation igbt | | |
| 5 | IXSH10N60B2D1 | High Speed IGBT with Diode
High Speed IGBT with Diode
Short Circuit SOA Capability
Preliminary Data Sheet
IXSH 10N60B2D1 IXSQ 10N60B2D1
VCES = 600 V I C25 = 20 A V CE(sat) = 2.5 V
D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Mounting torque TO-2  IXYS igbt | | |
| 6 | IXSH15N120A | IGBT, Insulated Gate Bipolar Transistor Preliminary Data Sheet
IXSH15N120A
IGBT
"S" Series - Improved SCSOA Capability
IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V
Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tsc PC TJ T JM T STG Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RG IXYS Corporation igbt | | |
| 7 | IXSH15N120AU1 | IGBT, Insulated Gate Bipolar Transistor IXSH15N120AU1
PRELIMINARY DATA SHEET
IGBT with Diode
"S" Series - Improved SCSOA Capability
C
G E Symbol
IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25� IXYS Corporation igbt | |
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