(PDF) AP4435D Datasheet - ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP4435D
Descripción	ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! AP4435D Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Fast Switching Speed ▼ PDIP-8 Package www.DataSheet4U.com Description D D D D PDIP-8 G S S S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. BVDSS RDS(ON) ID -30V 20mΩ -9A D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating - 30 ±20 -9 - 5.8 - 50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 50 Unit ℃/W Data and specifications subject to change without notice 201114031 1 page

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PDF AP4435D Data sheet ( Hoja de datos )