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Número de pieza | AO4422A | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO4422A (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! AO4422A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4422A uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
www.DataSheet4dUe.cvoicme is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
Product AO4422A is Pb-free (meets ROHS & Sony
259 specifications). AO4422AL is a Green Product
ordering option. AO4422A and AO4422AL are
electrically identical.
Features
VDS (V) = 30V
ID = 11A
(VGS = 10V)
RDS(ON) < 15mΩ (VGS = 10V)
RDS(ON) < 24mΩ (VGS = 4.5V)
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
11
9.3
50
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AO4422A.PDF ] |
Número de pieza | Descripción | Fabricantes |
AO4422 | N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
AO4422A | N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
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