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Número de pieza | SI1472DH | |
Descripción | N-Channel MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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N-Channel 30-V (D-S) MOSFET
Si1472DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.057 at VGS = 10 V
30
0.082 at VGS = 4.5 V
ID (A)
5.6a
4.7
Qg (Typ)
5.5
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SOT-363
SC-70 (6-LEADS)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• Load Switch for Portable Devices
D1
D2
G3
6D
5D
4S
Marking Code
AL XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1472DH-T1-E3 (Lead (Pb-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)a
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current
Repetitive Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipationa
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
5.6
4.5
4.2b, c
3.4b, c
15
10
5
2.3
1.3b, c
2.8
1.8
1.5b, c
1.0b, c
- 55 to 150
RoHS
COMPLIANT
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
Steady
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 125 °C/W.
Document Number: 73891
S-71344–Rev. B, 09-Jul-07
Symbol
RthJA
RthJF
Typical
60
34
Maximum
80
45
Unit
°C/W
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1
1 page New Product
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
6.0 3.5
5.0
Package Limited
4.0
3.0
2.0
www.DataSheet4U.com 1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25 50 75 100 125
TC – Case Temperature (°C)
Current Derating*
150
0.0
0
Si1472DH
Vishay Siliconix
25 50 75 100 125
TC – Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73891
S-71344–Rev. B, 09-Jul-07
www.vishay.com
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5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SI1472DH.PDF ] |
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SI1472DH | N-Channel MOSFET | Vishay Siliconix |
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