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PDF 2SK3798 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3798 | |
| Descripción | Silicon N Channel MOS Type Switching Regulator Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK3798 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3798
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
www.DataSheet4U.com
2SK3798
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.8 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 720 V)
• Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
900
900
±30
4
12
40
345
4
4.0
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 39.6 mH, IAR = 4.0 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2
3
1 2005-01-26
1 page  
2SK3798
www.DataSheet4U.com
10
rth – tw
1 Duty=0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
10μ
100μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 3.125°C/W
1ｍ
10ｍ
100ｍ
1
10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100
ID max (PULSED) *
10
ID max (CONTINUOUS) *
1
DC OPERATION
Tc = 25°C
100 µs *
1 ms *
0.1
※ SINGLE NONREPETITIVE PULSE Tc=25℃
CURVES MUST BE DERATED LINEARLY WITH
0.01
1
INCREASE IN TEMPERATURE.
10
100
DRAIN-SOURCE VOLTAGE VDS
1000
(V)
EAS – Tch
400
300
200
100
0
25 50 75 100 125 150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVE FORM
RG = 25 Ω
VDD = 90 V, L = 39.6mH
ΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
B
BVDSS
VDSS − VDD
⎟⎟⎠⎞
5 2005-01-26
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK3798.PDF ] | |
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