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PDF AOU414 Data sheet ( Hoja de datos )
| Número de pieza | AOU414 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOU414
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU414 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. Standard Product AOU414 is Pb-
free (meets ROHS & Sony 259 specifications).
AOU414L is a Green Product ordering option.
AOU414 and AOU414L are electrically identical.
Features
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 5.7mΩ (VGS = 10V)
RDS(ON) < 7.5mΩ (VGS = 4.5V)
TO-251
D
G DS
Top View
Drain
Connected to
Tab
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current B,G
TC=25°C G
TC=100°C B
VGS
ID
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
85
73
200
30
140
100
50
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
100
0.7
Max
125
1.5
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AOU414
TwYwPw.IDCaAtaLShEeLeEt4CU.TcRomICAL AND THERMAL CHARACTERISTICS
100
80
60
40
tA
=
L⋅ID
BV − VDD
20
TA=25°C
120
100
80
60
40
20
0
0.00001
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOU414.PDF ] | |
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